Publication List

Thursday 26 March 2015 // E. Members

Peer-reviewed papers in international scientific journals:

  1. Grain boundaries analysis in polycrystalline silicon by TEM Ph. Komninou, Th. Karakostas, G.L. Bleris and N.A. Economou, J. de Physique, Suppl. 43, No. C1-9 (1982)
  2. Rigid body Translation in the (-211) twin boundary in Si, Ph. Komninou, Th. Karakostas and P. Delavignette, J. Mater. Science 21 3817 (1986)
  3. On the Formation of Stacking Faults in Silicon Implanted with High Doses of Oxygen, Ph. Komninou, Th. Karakostas, J. Stoemenos and C. Jaussaud, J. Margail, J. Mater. Science 22 2515 (1987)
  4. Dislocation Movements and Deformation Twinning in Zn, J.G. Antonopoulos, Th. Karakostas, Ph. Komninou and P. Delavignette, Acta Met. 36 2493 (1988)
  5. TEM Study of Twin Boundary Dislocations in Cadmium, J.G. Antonopoulos, Ph. Komninou, Th. Karakostas, P. Delavignette, Scripta Met. 23 417 (1989)
  6. Coincidence in Hexagonal Materials, J.G. Antonopoulos, P. Delavignette, Th. Karakostas, Ph. Komninou, E. Laurent-Pinson, S. Lay, G. Nouet and J. Vicens, J. Physique 51 C1- 61 (1990)
  7. Interface Junctions and Symmetry E.G. Doni, Ph. Komninou, G.L. Bleris, Th. Karakostas and P. Delavignette J. Physique 51C1-121 (1990)
  8. A Dislocation Mechanism for the Growth of Twins in Deformed HCP Metals Ph. Komninou, E. Polychroniadis, J.G. Antonopoulos, Th. Karakostas and P. Delavignette, J. Physique 51, C1-215 (1990)
  9. Defect Microstructure in Laser-assisted Modulation Molecular-Beam Epitaxy GaAs on (100) Silicon, A. Christou, J. Stoemenos, N. Flevaris, Ph. Komninou and A. Georgakilas, J. Appl. Phys. 68 3298 (1990)
  10. High Symmetry Triple Junctions in Polycrystalline Silicon, Ph. Komninou, E.G. Doni, Th. Karakostas, G.L. Bleris and P. Delavignette, J. Appl. Crystal. 24 232 (1991)
  11. A Particular Case of Electronic Behaviour of the Σ=3 Grain Boundary in p-type Silicon, D.S. Kyriakos, A.N. Anagnostopoulos, Ph. Komninou and B. Ploss, Semicond. Sci. Technol. 6 607 (1991)
  12. Epitaxial growth of GaAs on Si by MBE, N.K. Flevaris, Ph. Komninou, A. Georgakilas and J. Stoemenos, Crystal Properties and Preparation 32-34 223 (1991)
  13. Grain Boundary Dislocation Structures in Deformed Hexagonal Close-Packed Metals, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, E. K. Polychroniadis, J. G. Antonopoulos and Th. Karakostas, Materials Science Forum 126-128 149 (1993)
  14. A Software Package for Grain Boundary Characterization by TEM, G. M. Provataris, E. K. Polychroniadis, E. G. Doni, Ph. Komninou, Th. Kehagias, Th. Karakostas and P. Delavignette, Materials Science Forum 126-128 257 (1993)
  15. TEM Study of Inversion Antiphase Domain Boundaries on GaAs/Si Interphase Grown by MBE, J. Stoemenos, Ph. Komninou, Th. Karakostas, A. Georgakilas, A. Christou, Materials Science Forum 126-128 631 (1993)
  16. Generation and Annihilation of Antiphase Domain Boundaries in GaAs on Si Grown by Molecular Beam Epitaxy, A. Georgakilas, J. Stoemenos, K. Tsagaraki, Ph. Komninou, N. Flevaris, P. Panayotatos, A. Christou, J. Mater. Res. 8 1908 (1993)
  17. Misfit Dislocations and Antiphase Domain Boundaries in GaAs/Si Interface, Ph Komninou, J, Stoemenos, G.P. Dimitrakopulos and Th. Karakostas, J. Appl. Phys. 75 143 (1994)
  18. Interfacial Dislocation Arrays in Twin Boundaries of Deformed Titanium, Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, J. G. Antonopoulos and Th. Karakostas, Scripta Metall. Mater. 30 1311 (1994)
  19. Interfacial Dislocations in Mechanically Deformed H.C.P. Titanium Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, J. G. Antonopoulos and Th. Karakostas J. Mech. Beh. Mat. 6 41 (1995)
  20. Slip Transfer Across Low-Angle Grain Boundaries of Deformed Titanium, Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, J. G. Antonopoulos and Th. Karakostas, Scripta Metall. Mater. 33 1883 (1995)
  21. Pyramidal Slip in Electron Beam Heated Deformed Titanium Th. Kehagias, Ph. Komninou, P. Grigoriadis, G.P. Dimitrakopulos, J. G. Antonopoulos and Th. Karakostas, Interface Science 3 196 (1996)
  22. Dislocation and Grain Boundary Interactions in Deformed Titanium Foils, Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, J. G. Antonopoulos and Th. Karakostas, J. Mech. Beh. Mat. 7 27 (1996)
  23. Topology of Crystallite Junctions in Epitaxial Semiconductors, G.P. Dimitrakopulos, Ph. Komninou, K. Zekentes, V. Papaioannou, J. Stoemenos and Th. Karakostas, J. Mech. Beh. Mat. 7 51 (1996)
  24. High-resolution Electron Microscopy Study of the (10-12) Twin and Defect Analysis in Deformed Polycrystalline α-Titanium, T. Braisaz, P. Ruterana, G. Nouet, A. Serra, Ph. Komninou, Th. Kehagias, Th. Karakostas, Phil. Mag. Lett. 74 331 (1996)
  25. Topology of Twin Junctions in Epitaxial β-SiC, V. Papaioannou, Ph. Komninou, G.P. Dimitrakopulos, K. Zekentes, B. Pecz, Th. Karakostas, and J. Stoemenos, Diamond and Related Materials 6 1362 (1997)
  26. Nanocrystalline Thin Titanium Films Grown on Potassium Bromide Single Crystals, T. Braisaz, P. Ruterana, G. Nouet, Ph. Komninou, Th. Kehagias, Th. Karakostas, P. Poulopoulos, M. Aggelakeris, N. Flevaris, A. Serra, Thin Solid Films 319 140 (1998)
  27. Interfacial Dislocations at the Junction Lines of 211 Microfacets of a Twin Boundary in Silicon, Ph. Komninou, G. Dimitrakopulos, Phil. Mag. A 78 255 (1998)
  28. Structural evolution of super alpha-two Ti3Al powder ball milled in air, Th. Kehagias, Ph. Komninou, P. Kavouras, E. Sarigiannidou, S. Kokkou, J.G. Antonopoulos, Th. Karakostas, G. Nouet, J. Mech. Beh. Mat. 9 257 (1998)
  29. Low field giant magnetoresistance in (111) textured Co/Au multilayers prepared with magnetron sputtering, S. Stavroyiannis, C. Christides, D. Niarchos, Th. Kehagias, Ph. Komninou, and Th. Karakostas, J. Appl. Phys. 84 6221 (1998)
  30. Low- energy configurations of the Σ=5 (210)[001] tilt grain boundary in FCC crystals, P. Grigoriadis, Th. Karakostas, Ph. Komninou and V. Pontikis, Materials Science Forum 294-296 177 (1999)
  31. Ball milling driven formation of interfaces in powders of super α2- Ti3Al alloy, Th. Kehagias, Ph. Komninou, J.G. Antonopoulos, Th. Karakostas, G. Nouet, V. Pontikis, Materials Science Forum 294-296 333 (1999)
  32. Structural characteristics of twin boundaries in deformed polycrystalline Zirconium, Ph. Komninou, G. Nouet, Th. Kehagias, A. Serra, Th. Karakostas, Materials Science Forum 294-296 365 (1999)
  33. Polycrystalline diamond formation by post-growth ion bombardment of sputter-deposited amorphous carbon films, P. Patsalas, S. Logothetidis, P. Douka, M. Gioti, G. Stergioudis, Ph. Komninou, G. Nouet and Th. Karakostas, Carbon 37 865 (1999)
  34. HREM study of ultra thin amorphous carbon films and structural changes of carbon forms to diamond under ion bombardment, Ph. Komninou, G. Nouet, Th. Kehagias, S. Logothetidis, M. Gioti, Th. Karakostas, Diamond and Related Materials 8 688 (1999)
  35. Gold films epitaxially grown by diffusion at the 3C-SiC / Si interface, Ph. Komninou, J. Stoemenos, G. Nouet, Th. Karakostas, J. Crystal Growth 203 103 (1999)
  36. Junction line disclinations: Characterisation and observations, G. Dimitrakopulos, Ph. Komninou, Th. Karakostas, R. C. Pond, Interface Science 7 217 (1999)
  37. The microstructure of Ti/Al and TiN ohmic contacts to gallium nitride, P. Ruterana, G. Nouet, Th. Kehagias, Ph. Komninou, Th. Karakostas, M.A. di Forte Poisson, F. Huet and H. Morkoc, Phys. Stat. Sol. (a) 176 767 (1999)
  38. The microstructure and electrical properties of directly deposited TiN omhic contact to Gallium Nitride, P. Ruterana, G. Nouet, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. A. Dimitriadis, F. Huet and M.A. di Forte Poisson, MRS Internet J. Nitride Semicond. Res. 5S1 F99W11.75 (2000)
  39. Growth of fcc Co in sputter-deposited Co/Au multiplayers with (111) texture, Th. Kehagias, Ph. Komninou, C. Christides, G. Nouet, S. Stavroyiannis and Th. Karakostas, J. Cryst. Growth 208 401 (2000)
  40. Crystalline structures of carbon complexes in amorphous carbon films, Ph. Komninou, G. Nouet, P. Patsalas, Th. Kehagias, M. Gioti, S. Logothetidis, Th. Karakostas, Diamond and Related Materials 9 703 (2000)
  41. Anisotropic microhardness and crack propagation in epitaxially grown GaN films, P. Kavouras, Ph. Komninou, M. Katsikini, V. Papaioannou, J. Antonopoulos and Th. Karakostas, J. Phys. Condens. Matter 12 10241 (2000)
  42. Interfacial dislocations in TiN/GaN thin films, Ph. Komninou, G. P. Dimitrakopulos, G. Nouet, Th. Kehagias, P. Ruterana and Th. Karakostas, J. Phys. Condens. Matter 12 10295 (2000)
  43. Misfit relaxation of the AlN/Al2O3 (0001) interface, Th. Kehagias, Ph. Komninou G. Nouet, P. Ruterana, Th. Karakostas, Phys. Rev. B 64 195329 (2001)
  44. Effects of the sapphire nitridation on the polarity and structural properties of GaN layers grown by plasma-assisted MBE, A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, M. Androulidaki, Ph. Komninou, Th. Kehagias and Th. Karakostas, Phys. Stat. Solidi (a) 188 567 (2001)
  45. Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy, E. Iliopoulos, K.F. Ludwig Jr., T.D. Moustakas, Ph. Komninou, T. Karakostas and G. Nouet, S.N.G. Chu, Materials Science and Engineering B 87 227 (2001)
  46. Structural Transitions of Inversion Domain Boundaries through Interactions with Intrinsic Basal stacking Faults in Epitaxial GaN, G. P. Dimitrakopulos, J. Kioseoglou, Th. Kehagias, E. Sarigiannidou, G. Nouet, A.Georgakilas, Th. Karakostas and Ph. Komninou, Physical Review B 64 245325 (2001)
  47. Structural properties of ZnSe epilayers on (111) GaAs, A. G. Kontos, N. Chrysanthakopoulos, M. Calamiotou, Th. Kehagias, Ph. Komninou, U. W. Pohl, J. Appl. Phys. 90 3301 (2001)
  48. Atomic scale models of interactions between inversion domain boundaries and intrinsic basal stacking faults in GaN, J. Kioseoglou, G. P. Dimitrakopulos, H.M. Polatoglou, L. Lymperakis, G. Nouet, and Ph. Komninou, Diamond and Related Materials 11 905 (2002)
  49. Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates, S. Mikroulis, A. Georgakilas, A. Kostopoulos, V. Cimalla, E. Dimakis, Ph. Komninou, Appl. Phys. Lett. 80 2886 (2002)
  50. Dependence of exchange bias energy on spin projections at (La,Ca)MnO3 ferromagnetic/antiferromagnetic interfaces, C. Christides, N. Moutis, Ph. Komninou, Th. Kehagias, G. Nouet, J. Appl. Phys. 92 397 (2002)
  51. Interfacial and defect structures in multilayered GaN/AlN films, Ph. Komninou, Th. Kehagias, J. Kioseoglou, G.P. Dimitrakopulos, A. Sampath, T.D. Moustakas, G. Nouet, and Th. Karakostas, J. Phys. Condens. Matter 14 13277 (2002)
  52. Disconnections at translation domain boundaries in epitaxial GaN, G.P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, G. Nouet, and Th. Karakostas, J. Phys. Condens. Matter 14 12709 (2002)
  53. A parametric study of implantation induced variations on the mechanical properties of epitaxially grown GaN films, P. Kavouras, M. Katsikini, Th. Kehagias, E. C. Paloura, Ph. Komninou, J. Antonopoulos and Th. Karakostas, J. Phys. Condens. Matter 14 12953 (2002)
  54. Microstructure of planar defects and their interactions in wurtzite GaN films, J. Kioseoglou, Ph. Komninou, G.P. Dimitrakopulos, Th. Kehagias, H.M. Polatoglou, G. Nouet and Th Karakostas, Solid State Electronics 47 553 (2003)
  55. A modified empirical potential for energetic calculations of planar defects in GaN, J. Kioseoglou, H.M. Polatoglou, L. Lymperakis, G. Nouet and Ph. Komninou, Computational Materials Science 27 43 (2003)
  56. Vitrification of lead – rich solid ashes from incineration of hazardous industrial wastes, P. Kavouras, G. Kaimakamis, Th. A. Ioannidis, Th. Kehagias, Ph. Komninou, S. Kokkou, E. Pavlidou, I. Antonopoulos, M. Sofoniou, A. Zouboulis, C.P. Hadjiantoniou, A. Prakouras and Th. Karakostas, Waste Management 23 361 (2003)
  57. Microstructural changes of processed vitrified solid waste products, P. Kavouras, Ph. Komninou, K. Chrissafis, G. Kaimakamis, S. Kokkou, K. Paraskevopoulos, Th. Karakostas, Journal of the European Ceramic Society 23 1305 (2003)
  58. Optical and electrical properties of TiN/n-GaN contacts in correlation with their structural properties, S Gautier, Ph Komninou, P Patsalas, Th Kehagias, S Logothetidis, C A. Dimitriadis and G Nouet, Semicond. Sci. Technol. 18 594 (2003)
  59. Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN, J. Kioseoglou, A. Béré, G.P. Dimitrakopulos, A. Serra, G. Nouet and Ph. Komninou, Phys. stat. solidi (c) 0(7) 2464 (2003)
  60. Effect of composition and annealing temperature on the mechanical properties of a vitrified waste, P. Kavouras, Ph. Komninou, Th. Karakostas, Journal of the European Ceramic Society 24 2095 (2004)
  61. Atomic structures and energies of partial dislocations in wurtzite GaN , J. Kioseoglou, G.P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, Phys. Rev. B 70 035309 (2004)
  62. Junction lines of inversion domain boundaries with stacking faults in GaN, J. Kioseoglou, G.P. Dimitrakopulos, Ph. Komninou, H.M. Polatoglou, A. Serra, A. Béré, G. Nouet and Th. Karakostas, Phys. Rev. B 70 115331 (2004)
  63. Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE Ph. Komninou, Th. Kehagias, A. Delimitis, G.P. Dimitrakopulos, J. Kioseoglou, E. Dimakis, A. Georgakilas and Th. Karakostas, Superlattices and Superstructures 36 509 (2004)
  64. Correlation of structure and magnetism of AgCo nanoparticles arrays, O. Crisan, M. Angelakeris, M. Norguès, Th. Kehagias and Ph. Komninou, N. Sobal, M. Giersig, and N. K. Flevaris, J. of Magnetism and Magnetic Mater. 272-276 E1253 (2004)
  65. Interfacial steps, dislocations and inversion domain boundaries in GaN/AlN/Si (0001) / (111) epitaxial system, G.P. Dimitrakopulos, A.M. Sanchez, Ph. Komninou, Th. Kehagias, Th. Karakostas, G. Nouet, and P. Ruterana, Phys. stat. sol. (b) 242 1617 (2005)
  66. Correlation between nucleation, morphology and residual strain of InN grown on GaN (0001), E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias and A. Georgakilas, J. Cryst. Growth 278 367 (2005)
  67. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy, E. Dimakis, E. Iliopoulos, K. Tsagaraki, Ph. Komninou, Th. Kehagias and A. Georgakilas, J. Appl. Phys. 97 113520 (2005)
  68. Interfacial structure of MBE grown InN on GaN, Th. Kehagias, E. Iliopoulos, A. Delimitis, G. Nouet, E. Dimakis, A. Georgakilas, and Ph. Komninou, Phys. Status Sol. (a) 202 777 (2005)
  69. Misfit Accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy, Th. Kehagias, A. Delimitis, Ph. Komninou, E. Iliopoulos, E. Dimakis, A. Georgakilas,G. Nouet, Appl. Phys. Lett. 86 151905 (2005)
  70. Disconnections and Inversion Domain Formation in GaN/AlN Heteroepitaxy on (111) Silicon, G. P. Dimitrakopulos, A. M. Sanchez, Ph. Komninou, P. Ruterana, G. Nouet, Th. Kehagias, and Th. Karakostas, Phys. Stat. Sol. (c) 2 2500 (2005)
  71. Atomic Simulations and HRTEM Observations of Σ = 18 Tilt Grain Boundary in GaN, J. Kioseoglou, A. Béré, Ph. Komninou, A. Serra, G. P. Dimitrakopulos, G. Nouet, and Th. Karakostas, Phys. Stat. Sol. (b) 202 799 (2005)
  72. Study of annealing induced devitrification of stabilized industrial waste glasses by means of micro x-ray fluorescence mapping and absorption fine structure spectroscopy, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Ph. Komninou, and Th. Karakostas and A. Erko, J. Non-Cryst. Solids 351 2474 (2005)
  73. XAFS studies on vitrified industrial waste, F. Pinakidou, M. Katsikini, E.C. Paloura, P. Kavouras, Ph. Komninou, Th. Karakostas, A. Erko, Physica Scripta T115 931 (2005)
  74. Partial dislocations in wurtzite GaN (invited paper), Ph. Komninou, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, and Th. Karakostas, Phys. Stat. Sol. (a) 202 2888 (2005)
  75. Synthesis, characterization and thermal properties of polymer/magnetite nanocomposites, P. Dallas, V.Georgakilas, D. Niarchos, Ph. Komninou, Th. Kehagias and D. Petridis, Nanotechnology 17 2046 (2006)
  76. Modification of the Fe-environment in Fe2O3 glass/glass ceramic systems containing Pb, Na and Si, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, O. Kalogirou, Ph. Komninou, and Th. Karakostas, Nuclear Instruments and Methods in Physics Research B 246 170 (2006)
  77. Application of μ-XAFS for the determination of the crystallization ratio in a series of vitro-ceramic materials containing industrial waste, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Ph. Komninou and Th. Karakostas, A. Erko, Nuclear Instruments and Methods in Physics Research B 246 238 (2006)
  78. Crystal phase separation and microstructure of a thermally treated vitrified solid waste, Th. Kehagias, Ph. Komninou, P. Kavouras, K. Chrissafis, G. Nouet and Th. Karakostas, Journal of the European Ceramic Society 26 1141 (2006)
  79. Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy, J. Arvanitidis, M. Katsikini, S. Ves, A. Delimitis, Th. Kehagias, Ph. Komninou, E. Dimakis, E. Iliopoulos, A. Georgakilas, Phys. Stat. Sol. (b) 243 1588 (2006)
  80. Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN (0001), A. Delimitis, P. Gladkov, Ph. Komninou, Th. Kehagias, J. Arvanitidis, S. Ves, M. Katsikini, E. Dimakis and A. Georgakilas, Phys. Stat. Sol. (a) 203 162 (2006)
  81. Structural properties of quaternary InAlGaN MQWs grown by plasma-assisted MBE, G. P. Dimitrakopulos, J. Kioseoglou, E. Dimakis, A. Georgakilas, G. Nouet, and Ph. Komninou, Phys. Stat. Sol. (a) 203 2151 (2006)
  82. Mixed partial dislocation core structure in GaN by high resolution electron microscopy, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, and Th. Karakostas, Phys. Stat. Sol. (a) 203 2156 (2006)
  83. Analysis of partial dislocations in wurtzite GaN using gradient elasticity, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, and I. Konstantopoulos, M. Avlonitis, E.C. Aifantis, Phys. Stat. Sol. (a), 203 2161 (2006)
  84. The role of alkali content in the devitrification mechanisms of SiO2-Fe2O3-Na2O-PbO system, P. Kavouras, Th. Kehagias, K. Chrissafis, Ph. Komninou, Th. Karakostas, Journal of Thermal Analysis and Calorimetry 86 715 (2006)
  85. On the coordination environment of Fe- and Pb-rich solidified industrial waste: an X-Ray absorption and Mössbauer study, F. Pinakidou, M. Katsikini, E. C. Paloura , P. Kavouras, O. Kalogirou, Ph. Komninou, Th. Karakostas, A. Erko, J. Non Crystalline solids 352 2933 (2006)
  86. Oxidation of very low energy nitrogen–implanted strained-silicon, N. Kelaidis, D. Skarlatos, V. Ioannou-Sougleridis, C. Tsamis, Ph. Komninou, B. Kellerman and M. Seacrist, Materials Science and Engineering B 135 199 (2006)
  87. Depth profile of the biaxial strain in a 10 μm thick InN (0001) film, J. Arvanitidis, D. Christofilos, G.A. Kourouklis, A. Delimitis, M. Katsikini, Ph. Komninou, S. Ves, E. Dimakis and A. Georgakilas, J. Appl. Phys. 100, 113516 (2006)
  88. Structure effects on the magnetism of AgCo nanoparticles, O. Crisan, M. Angelakeris, K. Simeonidis, Th. Kehagias, Ph. Komninou, M. Giersig, N.K. Flevaris, Acta Materialia 54, 5251 (2006)
  89. High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy, JS. Cabalu, A. Bhattacharyya, C. Thomidis, I. Friel, TD. Moustakas, CJ. Collins, Ph. Komninou, J. Appl. Phys. 100, 104506 (2006)
  90. Energetic of the 30° Shockley partial dislocation in wurtzite GaN, I. Belabbas, G. Dimitrakopulos, J. Kioseoglou, A. Béré, J.Chen, Ph. Komninou, P. Ruterana and G. Nouet, Superlattices and Microstructures 40 458 (2006)
  91. Structural properties of 10μm thick InN grown on sapphire (0001), E. Dimakis, J. Domagała, A. Delimitis, Ph. Komninou, A. Adikimenakis, E. Iliopoulos and A. Georgakilas, Superlattices and Microstructures 40 246 (2006)
  92. InN quantum dots grown on GaN (0001) by molecular beam epitaxy, E. Dimakis, A. Georgakilas, E. Iliopoulos, K. Tsagaraki, A. Delimitis, Ph. Komninou, H. Kirmse, W. Neumann, M. Androulidaki and N. T. Pelekanos, Phys. Sat. sol (c) 3, No. 11, 3983 (2006)
  93. Effect of ion implantation on the mechanical behavior of GaN films, P. Kavouras, Ph. Komninou, Th. Karakostas, Thin Solid Films 515 3011 (2007)
  94. Structural characterization of Na2O-SiO2-CaO glass ceramics reinforced with Electric Arc Furnace Dust, I. Tsilika and Ph. Komninou, J. Eur. Ceram. Soc. 27 2423 (2007)
  95. Atomic core configurations of the a-screw basal dislocation in wurtzite GaN, I. Belabbas, G. Nouet, Ph. Komninou, Journal of Crystal Growth 300 212 (2007)
  96. On the distribution and bonding environment of Zn and Fe in glasses containing Electric Arc Furnace Dust: a μ-XAFS and μ-XRF study, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Th. Kehagias, Ph. Komninou, Th. Karakostas, and A. Erko, Journal of Hazardous Materials 142 297 (2007)
  97. Strain distribution of thin InN epilayers grown on (0001) GaN templates by molecular beam epitaxy, A. Delimitis, Ph. Komninou, GP Dimitrakopulos, Th. Kehagias, J. Kioseoglou, Th. Karakostas, G. Nouet , Appl. Phys. Lett. 90, 061920 (2007)
  98. 3D modelling of misfit networks in the interface region of heterostructures, T. D Young, J. Kioseoglou, G. P. Dimitrakopulos, P. Dłuzewski, Ph. Komninou, J. Phys. D: Appl. Phys. 40 4084 (2007)
  99. Axial and radial growth of Ni-induced GaN nanowires, L. Geelhaar, C. Chèze, W. M. Weber, R. Averbeck, and H. Riechert, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, and Th. Karakostas, Appl. Phys. Lett. 91 093113 (2007)
  100. Structural role and coordination environment of Fe in Fe2O3-PbO-SiO2-Na2O composite glasses, F. Pinakidou, M. Katsikini, P. Kavouras, F. Komninou, Th. Karakostas and E.C. Paloura, J. Non Crystalline solids 354 105 (2008)
  101. Crystallization of Amorphous Silicon Thin Films: Comparison Between Experimental and Computer Simulation Results, J. Kioseoglou, Ph. Komninou, G. P. Dimitrakopulos, I. P. Antoniades, M.K. Hatalis and Th. Karakostas, J. Mat. Sci. 43 (11), 3976 (2008)
  102. Study of InN/GaN interfaces using molecular dynamics, J. Kioseoglou, E. Kalessaki, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, J. Mater. Sci. 43 3982 (2008)
  103. Interface Controlled Active Fracture Modes in Glass-Ceramics, P. Kavouras, Th. Kehagias, Ph. Komninou, K. Chrissafis, C. Charitidis, Th. Karakostas, J. Mat. Sci., 43 3954 (2008)
  104. Dislocation core investigation by Geometric Phase Analysis and the Dislocation Density Tensor, J Kioseoglou, G P Dimitrakopulos, Ph Komninou, Th Karakostas and E C Aifantis, J. Phys. D: Appl. Phys,. 41 1 (2008)
  105. Interatomic potential calculations of III(Al,In)-N planar defects with a III-species environment approach, J. Kioseoglou, Ph Komninou and Th Karakostas, Phys. stat. sol. (b) 245 1118 (2008)
  106. Micropore modification in InP, D. Nohavica, P. Gladkov, Z. Jarchovský, J. Zelinka, Ph. Komninou, A. Delimitis, Th. Kehagias, and Th. Karakostas, Phys. Stat. Sol (a) 205, 2577 (2008)
  107. Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta, J. Kioseoglou, N. Vouroutzis, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas, and Th. Karakostas, Phys. Stat. Sol (a) 205, 2569 (2008)
  108. Electron microscopy investigation of extended defects in non-polar gallium nitride layers deposited on r-plane sapphire, J.Smalc-Koziorowska, Ph. Komninou, S.-L. Sahonta, J. Kioseoglou, G. Tsiakatouras, A.Georgakilas, phys. stat. sol (c) 5, 3748 (2008)
  109. Controlled Growth of Porous Networks in Phosphide Semiconductor, A. Delimitis, Ph. Komninou, Th. Kehagias, E. Pavlidou, Th. Karakostas, P. Gladkov, D. Nohavica, J. Porous Materials 15, 75 (2008)
  110. Defect characterization and analysis of III-V nanowires grown by Ni-promoted MBE, L. Lari, R.T. Murray, M. Gass, T.J. Bullough, P.R. Chalker, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. Chèze, L. Geelhaar, and H. Riechert, Phys. Stat. Sol (a) 205 (2008)
  111. Fano effect in quasi-one-dimensional wires with short- or finite-range impurities, Vassilios Vargiamidis, Philomela Komninou and Hariton M. Polatoglou, phys. stat. sol (c) 5, 3813 (2008)
  112. Step-induced misorientation of GaN grown on r-plane sapphire, J. Smalc-Koziorowska, G. P. Dimitrakopulos, S.-L. Sahonta, G. Tsiakatouras, A. Georgakilas, and Ph. Komninou, Appl. Phys. Lett. 93 , 021910 (2008)
  113. Atomic-scale configuration of catalyst particles on GaN nanowires, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, C. Chèze, L. Geelhaar, H. Riechert and Th. Karakostas, Phys. Stat. Sol (c) 5, 3716-3719, (2008)
  114. Temperature dependent EXAFS of InN, M. Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, A. Georgakilas, E. Welter, Phys. Stat. Sol (a) 205, 2611 (2008)
  115. Effect of composition on the bonding environment of In in InAlN and InGaN epilayers M. Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, E. Iliopoulos, A. Adikimenakis, A. Georgakilas, E. Welter, Phys. Stat. Sol (a) 205, 2593 (2008)
  116. Structural properties of ultrathin InGaN/GaN quantum wells, S.-L. Sahonta , Ph. Komninou, G. P. Dimitrakopulos , C. Salcianu, E. J. Thrush, and Th. Karakostas, Phys. Stat. Sol (a) 205, 2556 (2008)
  117. Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE, A. Adikimenakis, S.-L. Sahonta, G.P. Dimitrakopulos, J. Domagala, Th. Kehagias, Ph. Komninou, E. Iliopoulos and A. Georgakilas, Journal of Crystal Growth 311, 2010 (2009)
  118. Stranski-Krastanow growth of (11-22)-oriented GaN/AlN quantum dots L. Lahourcade, S. Valdueza-Felip, T. Kehagias, G. P. Dimitrakopulos, Ph. Komninou, and E. Monroy, Appl. Phys. Lett. 94, 111901 (2009)
  119. Energetics of oxygen adsorption and incorporation at InN polar surface: A first-principles study, A. Belabbes, J. Kioseoglou, Ph. Komninou and Th. Karakostas, Phys. Stat. Sol. (c) 6, S364 (2009)
  120. Core models of a-edge threading dislocations in wurtzite III ( Al, Ga, In)-Nitrides, J. Kioseoglou, Ph Komninou and Th Karakostas, Phys. Stat. Sol (a) 206, No. 8, 1931 (2009)
  121. Study of interfacial defects in uced during the oxidation of ultrathin strained silicon layers, V. Ioannou-Sougleridis , N. Kelaidis, C. Tsamis, D. Skarlatos, C. A. Krontiras, and S. N. Georga, Ph. Komninou, B. Kellerman and M. Seacrist, J. Appl. Phys., 105, 114503 (2009)
  122. Magnesium adsorption and incorporation in InN (0 0 0 1) and (000-1) surfaces: A first- principles study, A. Belabbes, J. Kioseoglou, Ph. Komninou, G.A. Evangelakis, M. Ferhat, Th. Karakostas, Applied Surface Science 255 8475 (2009)
  123. Strain accommodation and interfacial structure of AlN interlayers in GaN (Invited paper), G. P. Dimitrakopulos, E. Kalesaki, Ph. Komninou, Th. Kehagias, J. Kioseoglou and Th. Karakostas, Crystal Research and Technology 44, 1170 (2009)
  124. Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy, Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. Georgakilas, W. Neumann, Th. Karakostas, and Ph. Komninou, Applied Physics Letters 95, 071905 (2009)
  125. Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy, S.-L. Sahonta, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, A. Adikimenakis, E. Iliopoulos, A. Georgakilas, H. Kirmse, W. Neumann, and Ph. Komninou, Appl. Phys. Lett. 95, 021913 (2009)
  126. Polar AlN/GaN interfaces: Structures and energetics, J. Kioseoglou, E. Kalesaki, L. Lymperakis, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, Phys. Stat. Sol (a) 206, 1892 (2009)
  127. Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer, G. P. Dimitrakopulos, Th. Kehagias, A. Ajagunna, J. Kioseoglou, I. Kerasiotis, G. Nouet, A. P. Vajpeyi, Ph. Komninou and Th. Karakostas, Phys. Stat. Sol (a) 207, 1074 (2010)
  128. Electron microscopy of InGaN nanopillars spontaneously grown on Si (111) substrates, Th. Kehagias, I. Kerasiotis, A. P. Vajpeyi, I. Hausler, W. Neumann, A. Georgakilas, G. P. Dimitrakopulos, and Ph. Komnninou, Phys. Stat. Sol (c) 7, 1305 (2010)
  129. Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE, Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G. P. Dimitrakopulos, and Ph. Komninou, Phys. Stat. Sol (b) 247, 1637 (2010)
  130. Morphology and strain of self-assembled semipolar GaN quantum dots in (1122) AlN, G. P. Dimitrakopulos, E. Kalesaki, J. Kioseoglou, Th. Kehagias, A. Lotsari, L. Lahourcade, E. Monroy, H. Kirmse, W. Neumann, G. Jurczak, T. D. Young, P. Dluzewski, Th. Karakostas and Ph. Komninou, J. Appl. Phys. 108, 104304 (2010)
  131. Structure, stability and mechanical performance of AlN:Ag nanocomposite films, A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, P. Kavouras, H. Zoubos, L.E. Koutsokeras, P. Patsalas, Ph. Komninou, Surface & Coatings Technology 204, 1937 (2010)
  132. Metal-containing amorphous Carbon (a-C:Ag) and AlN (AlN:Ag) metallo-dielectric nanocomposites, G.M. Matenoglou, H. Zoubos, A. Lotsari, Ch.E. Lekka, Ph. Komninou, G. P. Dimitrakopulos, C. Kosmidis, G.A. Evangelakis, P. Patsalas, Thin Solid Films 518, 1508 (2009)
  133. Silver nanoparticles and graphitic carbon through thermal decomposition of a silver/acetylenedicarboxylic salt, P. Dallas, A. B.Bourlinos, P. Komninou, M. Karakassides, and D. Niarchos, Nanoscale Research Letters 4, 1358 (2009)
  134. On the deposition mechanisms and the formation of glassy Cu-Zr thin films, G. A. Almyras, G. M. Matenoglou, Ph. Komninou, C. Kosmidis, P. Patsalas, and G. A.Evangelakis, J. Appl. Phys. 107, 084313 (2010)
  135. Crystallization process of thermally treated vitrified EAFD waste, I. Tsilika, I. Elefteriadis, Th. Kehagias, E. Pavlidou, Th. Karakostas, and Ph. Komninou, J. Europ. Ceram. Soc. 30, 2009 (2010)
  136. Continuum and atomistic modelling of the mixed straight dislocation, P. Dluzewski, T. D. Ypung, G. P. Dimitrakopulos, and Ph. Komninou, International Journal for Multiscale Computational Engineering 8 (3), 331 (2010)
  137. Direct comparison of catalyst free and catalyst – induced GaN nanowires, C. Cheze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, St. Munch, R. Rothermund, St. Reitzenstein, A. Forchel, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, and Th. Karakostas, Nano Res. 3, 528 (2010)
  138. Bare-Eye View at the Nanoscale: a New Visual Interferometric Multi-Indicator (VIMI), E. Lidorikis, P. Patsalas, N. Panagiotopoulos, C. Prouskas, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, and A. Tighe, ACS Applied Materials and Interfaces 2, 3052 (2010)
  139. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: structural and optical properties, G.E. Dialynas, S. Kalliakos, C. Xenogianni, M. Androulidaki, T. Kehagias, P. Komninou, P.G. Savvidis, Z. Hatzopoulos, N.T. Pelekanos, J. Appl. Phys. 108, 103525 (2010)
  140. Indium adsorption and incorporation mechanisms in AlN, E. Kalesaki, J. Kioseoglou, Ph. Komninou and Th. Karakostas, J. Mat. Sci. 46, 4377 (2011)
  141. Properties of GaN nanowires grown by molecular beam epitaxy (Invited Paper), C. Chèze, B. Jenichen, O. Brandt, C. Pfüller, St. Münch, R. Rothemund, St. Reitzenstein, A. Forchel, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas, L. Lari, P. Chalker, M. Gass, H. Riechert and L. Geelhaar, IEEE J. Sel. Top. Quant. Electr. 17, 878 (2011)
  142. Growth and characterization of polar (0001) and semipolar (11-22) InGaN/GaN quantum dots, A. Das, P. Sinha, Y. Kotsar, P. K. Kandaswamy, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, G. Nataf, P. De Mierry, E. Monroy, J. Cryst. Gr. 323, 161 (2011)
  143. Effect of edge threading dislocations on the electronic structure of InN, E. Kalesaki, J. Kioseoglou, L. Lymperakis, Ph. Komninou and Th. Karakostas, Appl. Phys. Lett. 98, 072103 (2011)
  144. Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers, V. Ioannou-Sougleridis, N. Kelaidis, D. Skarlatos, C. Tsamis, S. N.Georga, C.A. Krontiras, Ph. Komninou, Th. Speliotis, P. Dimitrakis, B. Kellerman, M. Seacrist, Thin Solid Films 519, 5456 (2011)
  145. Electronic properties and bonding characteristics of AlN:Ag Thin Film Nanocomposites, Ch. E. Lekka, P. Patsalas, Ph. Komninou and G. A. Evangelakis, J. Appl. Phys. 109, 054310 (2011)
  146. Electronic structure of 1/6 <2023> partial dislocations in wurtzite GaN, J. Kioseoglou, E. Kalesaki, L. Lymperakis, J. Neugebauer, Ph. Komninou and Th. Karakostas, J. Appl. Phys. 109, 083511 (2011)
  147. Comparison of Fe and Si doping of GaN: An EXAFS and Raman study, M. Katsikini, F. Pinakidou, J. Arvanitidis, E. C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos and T. D. Moustakas, Mat. Sci. Eng. B 176, 723 (2011)
  148. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy, Z. Gacevic, A. Das, J. Teubert, Y. Kotsar, P. K. Kandaswamy, Th. Kehagias, T. Koukoula, Ph. Komninou, and E. Monroy, J. Appl. Phys. 109, 103501 (2011)
  149. Erratum: Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. Georgakilas, W. Neumann, Th. Karakostas, and Ph. Komninou, Appl. Phys. Lett. 99, 059902 (2011)
  150. Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots, A. Das, G. P. Dimitrakopulos, Y. Kotsar, A. Lotsari, Th. Kehagias, Ph. Komninou and E. Monroy, Appl. Phys. Lett. 98, 201911 (2011)
  151. Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, H. Kirmse, W. Neumann, Ph. Komninou and Th. Karakostas, J. Appl. Phys. 110, 053715 (2011)
  152. Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma assisted MBE, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. Das, E. Monroy and Ph. Komninou, Microelectronic Enginnering 90, 108 (2012)
  153. Morphology and origin of V-defects in semipolar (11–22) InGaN, A. Lotsari, A. Das, Th. Kehagias, Y. Kotsar, E. Monroy, Th. Karakostas, P. Gladkov, Ph. Komninou and G. P. Dimitrakopulos, J. Cryst. Gr. 339, 1 (2012)
  154. Structure and Strain State of Polar and Semipolar InGaN Quantum Dots, T. Koukoula, A. Lotsari, Th. Kehagias, G. P. Dimitrakopulos, I. H"ausler, A. Das, E. Monroy, Th. Karakostas and Ph. Komninou, Appl. Surf. Sci. 260 , 7 (2012)
  155. Atomistic modeling and HRTEM simulations of misfit dislocations in InN/GaN interfaces, J. Kioseoglou, E. Kalesaki, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou and Th. Karakostas, Appl. Surf. Sci. 260 , 23 (2012)
  156. Optical Encoding by Plasmon-Based Patterning: Hard and Inorganic Materials Become Photosensitive, A. Siozios, D. C. Koutsogeorgis, E. Lidorikis, G. P. Dimitrakopulos, Th. Kehagias, H. Zoubos, Ph. Komninou, W. M. Cranton, C. Kosmidis and P. Patsalas, Nanoletters, 12, 259 (2012)
  157. Structural characterization of InN epilayers grown on r-plane sapphire by plasma-assisted MBE, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas, and Ph. Komninou, Phys. Stat. Sol. (c), 9, 534 (2012)
  158. Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, Ph. Komninou, and Th. Karakostas, Phys. Stat. Sol. (c), 9, 484 (2012)
  159. Reconstructions and electronic structure of (11-22) and (11-2-2) semipolar AlN surfaces, E. Kalesaki, L. Lymperakis, J. Kioseoglou, J. Neugebauer, Th. Karakostas, and Ph. Komninou, J. Appl. Phys. 112 , 033510 (2012)
  160. Effects of intrasubband coupling on the scattering phases and density of states in a quantum wire, Vassilios Vargiamidis, Vassilios Fessatidis, Ph. Komninou, Physics Letters A 376, 3337 (2012)
  161. Dissociation of the 60° basal dislocation in wurtzite GaN, I. Belabbas, J. Chen, Ph. Komninou, and G. Nouet, Phys. Status Solidi C 10, 84 (2013)
  162. Structural and electronic properties of InGaN/GaN nanowires by the use of EELS, M.-M. Soumelidou, J. Kioseoglou, H. Kirmse, P. Komninou, T. Karakostas, Phys. Status Solidi C 10, 105 (2013)
  163. Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire, G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, Phys. Status Solidi A 210, 199 (2013)
  164. Influence of defect characteristics on the nanoindentation response of a-plane GaN thin films, P. Kavouras, A. Lotsari, Th. Kehagias, A. Georgakilas, Ph. Komninou, and G. P. Dimitrakopoulos, Phys. Status Solidi A 210, 213 (2013)
  165. Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution, M. Zervos, A. Othonos, D. Tsokkou, J. Kioseoglou, E. Pavlidou, and P. Komninou, Phys. Status Solidi A 210, 226 (2013)
  166. Atomic scale morphology, growth behaviour and electronic properties of semipolar 1 0-13 GaN surfaces, J. Kioseoglou, E. Kalesaki, L. Lymperakis, Th. Karakostas and Ph. Komninou, J. Phys.: Condens. Matter 25, 045008 (2013)
  167. Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc, G. Jacopin, L. Rigutti1, J. Teubert, F. H. Julien, F. Furtmayr, Ph. Komninou, Th. Kehagias, M. Eickhoff and M. Tchernycheva, Nanotechnology 24, 125201 (2013)
  168. Electron energy loss near edge structure of InxAl 1-xN alloys, M.M. Soumelidou, J. Kioseoglou, H. Kirmse, Th. Karakostas, Ph. Komninou, Microelectronic Engineering 112, 198 (2013)
  169. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition, M. Pervolaraki, Ph. Komninou, J. Kioseoglou, G.I. Athanasopoulos, J. Giapintzakis, Applied Surface Science 278, 67 (2013)
  170. InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface, J. Teubert, S. Koslowski, S. Lippert, M. Schäfer, J. Wallys, G. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Das, E. Monroy and M. Eickhoff, J. Appl. Phys. 114, 074313 (2013)
  171. The 60 basal dislocation in wurtzite GaN: Energetics, electronic and core structures, I. Belabbas, J. Chen, Ph. Komninou, G. Nouet, Computational Materials Science 79, 118 (2013)
  172. Ultrafast pulsed laser deposition of carbon nanostructures: Structural and optical characterization, M. Pervolaraki, Ph. Komninou, J. Kioseoglou, A. Othonos, J. Giapintzakis, Applied Surface Science 278, 101 (2013)
  173. Nanostructural and electronic properties of polytypes in InN nanocolumns, J. Kioseoglou, T. Koukoula, Ph. Komninou, A. Georgakilas, M. Androulidaki and Th. Kehagias, J. Appl. Phys. 114, 074312 (2013)
  174. Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires, Th. Kehagias, G. P. Dimitrakopulos, P. Becker, J. Kioseoglou, F. Furtmayr, T. Koukoula, I. Häusler, A. Chernikov, S. Chatterjee, Th. Karakostas, H.-M. Solowan, U. T. Schwarz, M. Eickhoff and Ph. Komninou, Nanotechnology 24, 435702 (2013)
  175. Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates, Th. Kehagias, G. P. Dimitrakopulos, A. O. Ajagunna, T. Koukoula, K. Tsagaraki, A. Adikimenakis, Ph. Komninou, and A. Georgakilas, J. Appl. Phys. 114, 163519 (2013)
  176. Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier, A. Hospodková, J. Oswald, J. Pangrác, M. Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová and E. Hulicius, J. Appl. Phys. 114, 174305 (2013)
  177. Detection of hydrogen at room temperature with graphite-Pt nanoparticles/Si Schottky diodes, R. Yatskiv, J. Grym, O. Cemohorsky, C. Bazioti, G.P. Dimitrakopulos, P. Komninou, Proceedings of the International Semiconductor Conference, CAS 1, 23 (2013)
  178. Transport properties of metal–semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles, R. Yatskiv, J. Grym, V.V. Brus, O. Cernohorsky, P.D. Maryanchuk, C. Bazioti, G.P. Dimitrakopulos and Ph. Komninou, Semicond. Sci. Technol. 29, 045017 (2014)
  179. Influence of laser annealing on the structural properties of sputtered AlN:Ag plasmonic nanocomposites, C. Bazioti, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Siozios, E. Lidorikis, D. C. Koutsogeorgis, P. Patsalas, Journal of Materials Science 49, 3996 (2014)
  180. Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures, J. Kioseoglou, Ph. Komninou, J. Chen, G. Nouet, E. Kalesaki, and Th. Karakostas, Phys. Status Solidi C 11, No. 2, 289 (2014)
  181. Thermal oxidation and facet-formation mechanisms of Si nanowires, J. Kioseoglou, Ph. Komninou and M. Zervos, Phys. Status Solidi RRL 8, 307 (2014)
  182. Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates, G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, Ph. Komninou, Appl. Surf. Sci. 306, 89 (2014)
  183. Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots, Alice Hospodková, Jiří Pangrác, Markéta Zíková, Jiří Oswald, Jan Vyskočil, Philomela Komninou, Joseph Kioseoglou, Nikoleta Florini, Eduard Hulicius, Appl. Surf. Sci. 301, 173 (2014)
  184. Self-annihilation of inversion domains by high energy defects in III-Nitrides, T. Koukoula, J. Kioseoglou, T. Kehagias, A.O. Ajagunna, P. Komninou, A. Georgakilas, Appl. Phys. Lett. 104, 141914 (2014)
  185. Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates, Ph. Komninou, P. Gladkov, Th. Karakostas, J. Pangrác, O. Pacherová, J. Vaniš, E. Hulicius, J. Crystal Growth 396, 54 (2014)
  186. Broad compositional tunability of indium tin oxide nanowires grown by the vapour- liquid-solid mechanism, M. Zervos, C.N. Mihailescu, J. Giapintzakis, C.R. Luculescu, N. Florini, Ph. Komninou, J. Kioseoglou, and A. Othonos, APL Materials 2, 056104 (2014)
  187. Observation of Surface Dirac Cone in High-Quality Ultrathin Epitaxial Bi2Se3 Topological Insulator on AlN(0001) Dielectric, Polychronis Tsipas, Evangelia Xenogiannopoulou, Spyridon Kassavetis, Dimitra Tsoutsou, Evangelos Golias, Calliope Bazioti, George P. Dimitrakopulos, Philomela Komninou, Hu Liang, Matty Caymax, and Athanasios Dimoulas, ACS Nano 8 (7), 6614 (2014)
  188. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy, A. Lotsari, Th. Kehagias, G. Tsiakatouras, K. Tsagaraki, M. Katsikini, J. Arvanitidis, D. Christofilos, S. Ves, Ph. Komninou, A. Georgakilas, and G. P. Dimitrakopulos, J. Appl. Phys. 115, 213506 (2014)
  189. Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy, Alice Hospodková, Jiří Pangrác, Jan Vyskočil, Markéta Zíková, Jiří Oswald, Philomela Komninou, Eduard Hulicius, J. Crystal Growth 414, 156 (2015)
  190. MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm, Markéta Zíková, Alice Hospodková, Jiří Pangrác, Jiří Oswald, Pavel Krčil, Eduard Hulicius, Philomela Komninou, Joseph Kioseoglou, J. Crystal Growth 414, 167 (2015)
  191. Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces, J. Kioseoglou, V. Pontikis, Ph. Komninou, Th. Pavloudis, J. Chen and Th. Karakostas, J. Phys.: Condens. Matter 27, 125006 (2015)
  192. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy,E. Xenogiannopoulou, P. Tsipas, K. E. Aretouli, D. Tsoutsou, S. A. Giamini, C. Bazioti, G. P. Dimitrakopulos, Ph. Komninou, S. Brems, C. Huyghebaert, I. P. Raduc and A. Dimoulas, Nanoscale 7, 7896 (2015)
  193. Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks,J. Kioseoglou, Th. Pavloudis, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. D. Latham, M. J. Rayson, P. R. Briddon, and M. Eickhoff, J. Appl. Phys. 118, 034301 (2015)
  194. A study of the piezoelectric properties of semipolar 1122 GaN/AlN quantum dots, T.D. Young, G. Jurczak, A. Lotsari, G.P. Dimitrakopulos, P. Komninou, P. Dlłuzewski, Phys. Status Solidi B 252, No. 10 (2015)
  195. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire, A. Adikimenakis, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, K. E. Aretouli, K. Tsagaraki, M. Androulidaki, Ph. Komninou, A. Georgakilas, J. Appl. Phys. 117, 244302 (2015)
  196. Laser-matter interactions, phase changes and diffusion phenomena during laser annealing of plasmonic AlN:Ag templates and their applications in optical encoding, A. Siozios, D. C. Koutsogeorgis, E. Lidorikis, G. P. Dimitrakopulos, N. Pliatsikas, G. Vourlias, T. Kehagias, P. Komninou, W. Cranton, C. Kosmidis, P. Patsalas, J. Phys. D: Appl. Phys. 48, 285306 (2015)
  197. Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires, Th. Kehagias, N. Florini, J. Kioseoglou, Th. Pavloudis, Ph. Komninou, T. Walther, K. Moratis, Z. Hatzopoulos, N. T. Pelekanos, Semicond. Sci. Technol. 30, 114012 (2015)
  198. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy, C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, Ph. Komninou, Th. Karakostas, E. Iliopoulos, G. P. Dimitrakopulos, J. Appl. Phys. 118, 155301 (2015)
  199. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy, J. E. Kruse, L. Lymperakis, S. Eftychis, A. Adikimenakis, G. Doundoulakis, K. Tsagaraki, M. Androulidaki, A. Olziersky, P. Dimitrakis, V. Ioannou-Sougleridis, P. Normand, T. Koukoula, Th. Kehagias, Ph. Komninou, G. Konstantinidis, A. Georgakilas, J. Appl. Phys. 119, 224305 (2016)
  200. Ordered structures in III-Nitride ternary alloys, Th. Pavloudis, J. Kioseoglou, Th. Karakostas, Ph. Komninou, Computational Materials Science 118, 22 (2016)
  201. Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires, S. Eftychis, J. Kruse, T. Koukoula, Th. Kehagias, Ph. Komninou, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, P. Tzanetakis, E. Iliopoulos, A. Georgakilas, Journal of Crystal Growth 442, 8 (2016)
  202. The influence of structural characteristics on the electronic and thermal properties of GaN/AlN core/shell nanowires, Th. Pavloudis, K. Termentzidis, Ph. Komninou, C. D. Latham, P. R. Briddon, J. Kioseoglou, J. Appl. Phys. 119, 074304 (2016)
  203. Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces,T. Koukoula, J. Kioseoglou, Th. Kehagias, F. Furtmayr, M .Eickhoff, H. Kirmse, Th. Karakostas, Ph. Komninou, Materials Science in Semiconductor Processing, doi: 10.1016/j.mssp.2016.03.015 (2016)
  204. The metalorganic vapour phase epitaxy growth of AIIIBV heterostructures observed by reflection anisotropy spectroscopy, M. Zíková, A. Hospodková, J. Pangrác, J. Vyskocil, E. Hulicius, J. Oswald, P. Komninou, J. Kioseoglou,Acta Physica Polonica A 129, A75 (2016)
  205. Ab-initio electronic structure calculations and properties of (SixSn1-x)3N4 ternary nitrides, Th. Pavloudis, M. Zervos, Ph. Komninou, J. Kioseoglou, Thin Solid Films 613, 43 (2016)

Book Chapters and Review Papers:

  1. Topological Analysis of Defects in Epitaxial Nitride Films and Interfaces in Interfaces and defects at atomic level, eds C. Humphreys, Th. Karakostas and P. Ruterana, Phys. stat. solidi (b) 227, 45 (2001), G. P. Dimitrakopulos, Ph. Komninou, R.C. Pond
  2. Plasma assisted molecular beam epitaxy of III-V nitrides Chapter 3 in Nitride Semiconductors: Handbook on Materials and Devices, pp. 107-192, eds. P. Ruterana, M. Albrecht, J. Neugebauer, (Willey-VCH Verlag GmbH, Berlin, 2003) A. Georgakilas, H. M. Ng, Ph. Komninou
  3. Topological Analysis of Defects in Nitride Semiconductors Chapter 7 in Nitride Semiconductors: Handbook on Materials and Devices, pp. 319-378, eds. P. Ruterana, M. Albrecht, J. Neugebauer (Willey-VCH Verlag GmbH, Berlin, 2003), G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas and R.C. Pond
  4. Interfaces and Defect Interactions in Nitride Compound Semiconductors for Optoelectronic Applications Chapter 27 in Recent Research Developments in Physics vol.4 (2003), pp. 593-629 (Transworld Research Network, India, 2004, ISBN: 81-7895-078-2), Ph. Komninou, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou and Th. Karakostas
  5. Nonlinear finite element and atomistic modeling of dislocations in heterostructures, Chapter 13 in Computer Methods in Mechanics - Lectures on Computational and Mathematical Methods (2009), Springer Paweł Dłuzewski, Toby D.Young, George P.Dimitrakopulos, Joseph Kioseoglou and Ph. Komninou

Internet invited Review paper:

  1. Partial dislocations in wurtzite GaN J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, H. M. Polatoglou, and Th. Karakostas, Psi-k network Scientific Highlight of the Month (August 2004)

Conference Publications:

  1. Electrical Characteristics of Specific Grain boundaries in Polycrystalline Si, O.E. Valassiades, K.J. Chrissafis, C.A. Dimitriadis, L. Papadimitriou, Ph. Komninou, Th. Karakostas, N.A. Economou, Proc. of the 5th International CEC Photovoltaic Solar Energy Conference, Reidel, 1043 (1983)
  2. Regularities in the Formation of Adjacent Interfaces in Polycrystalline Si, Ph. Komninou and Th. Karakostas, MRS Proc. on "Poly-Micro-Crystalline and Amorphous Semiconductors", eds. P. Pinard, S. Kalbitzer (les editions de Physique), 95 (1984)
  3. An accurate determination of a very small deviation from an ideal twin in a Si Bicrystal, E.K. Polychroniadis, Ph. Komninou, Th. Karakostas and P. Delavignette, Proc. of the 8th European Congress on Electron Microscopy vol. 1, Electron Micros¬copy 1984, 537 (1984)
  4. Coincidence Site Lattice (CSL) dislocations in a twin boundary of annealed Zn, Th. Karakostas, J.G. Antonopoulos, Ph. Komninou, G.L. Bleris and P. Delavignette, Proc. of the 8th European Congress on Electron Microscopy vol. 1, Electron Micros¬copy 1984, 551 (1984)
  5. How to Determine by TEM the Deviation to the Coincidence in Grain Boundaries, A. Bary, S. Hagege, P. Ayed, J. Vicens, S. Lay, P. Delavignette, E.K. Polychroniadis, Ph. Komninou, Th. Karakostas, G. Nouet, Proc. of the XIth International Congress on Electron Microscopy, 1325 (1986)
  6. Electron Microscopy of the Epitaxial Growth of GaAs on Si by Molecular Beam Epitaxy, Ph. Komninou, A. Georgakilas, N.K. Flevaris, Proc. of the III Balkan Congress on Electron Microscopy, 197 (1989)
  7. The Symmetry of [110] Tilt Grain Boundaries in Polycrystalline Silicon, E. Doni, Ph. Komninou, G.L. Bleris, Th. Karakostas, Proc. of the III Balkan Congress on Electron Microscopy, 198 (1989)
  8. TEM Study of Deformation Twins in HCP Metals, Ph. Komninou, E. Polychroniadis, J. Antonopoulos, Th. Karakostas and P. Delavignette, Proc. of the III Balkan Congress on Electron Microscopy, 471 (1989)
  9. Triple Junctions in Polycrystalline Si, Ph. Komninou, E.G. Doni, Th. Karakostas, G.L. Bleris and P. Delavignette, Proc. of the 1st General Conference of the Balkan Physical Union, 860 (1991)
  10. Dislocations in Grain Boundaries of Deformed Titanium, Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, J. G. Antonopoulos and Th. Karakostas, Proc. of the 13th International Congress on Electron Microscopy, ICEM 13, eds. J. P. Chevalier, F. Glas, P. W. Hawkes, Les editions de Physique, 21 (1994)
  11. The Atomic Structure of (101-2) and (101-1) Twins in Deformed Polycrystalline Titanium: Experimental and Theoretical study, T. Braisaz, Ph. Komninou, Th. Kehagias, Th. Karakostas, P. Ruterana, G. Nouet and A. Serra “Interface Science and Materials Interconnection”, Proceedings of JIMIS-8, The Japan Institute of Metals, 439 (1996)
  12. HREM Study of Ultra Thin Titanium Films, T. Braisaz, P. Ruterana, G. Nouet, Ph. Komninou, Th. Kehagias, Th. Karakostas, P. Poulopoulos, M. Aggelakeris, N. Flevaris and A.Serra, Proceedings of the MRS 97 Spring Meeting, San Fransisco (USA), Vol. 472, pp. 391-396, (1998)
  13. Microstructure of TiN layers used as ohmic contacts on GaN, P. Ruterana, G. Nouet, Th. Kehagias, Ph. Komninou, Th. Karakostas, M.A. di Forte Poisson, F. Huet, M. Tordjman and H. Morkoc, Proceedings of the XI Conference on “Microscopy of Semiconducting Materials”, Oxford (UK), Inst. Phys. Conf. Ser. No 164, 567-570 (1999)
  14. Mechanical Alloying of Ti3Al Powders, P. Kavouras, Th. Kehagias, Ph. Komninou, G. Nouet, G. Dimitrakopulos, J. Antonopoulos, and Th. Karakostas Proceedings of the Summer School «Advanced Materials for Industrial Applications», Kavala, Greece, June 1999, 243-246 (1999)
  15. Electron Microscopy Studies of Defects in Deformed Hexagonal Materials Ph. Komninou, Th. Kehagias, Th. Karakostas, J.G. Antonopoulos, T. Braisaz, G. Nouet and A. Serra, In Multiscale Phenomena in Plasticity : from experiments to phenomenology, modeling and materials engineering", eds. J. Lépinoux, D. Mazière, V. Pontikis, and G. Saada, NATO Science Series (Kluwer Academic Publishers) 367, pp. 215-226 (2000)
  16. Materials properties of GaN films with Ga- or N face polarity grown by MBE on Al2O3 (0001) substrates under different growth conditions, A. Kostopoulos, S. Mikroulis, E. Dimakis, E-M. Pavelescu, K. Tsagaraki, G. Konstantinidis, A. Georgakilas, Ph. Komninou, Th. Kehagias and Th. Karakostas, Proceedings of Microelectronics, Microsystems and Nanotechnology 2000 (MMN 2000) eds. A. G. Nassiopoulou X. Zianni, World Scientific (Singapore) 201-204 (2001)
  17. Microhardness characterization of epitaxially grown GaN films. Effect of light ion implantation, P. Kavouras, M.Katsikini, Ph. Komninou, E. C. Paloura, J. G. Antonopoulos, Th. Karakostas, Proceedings of Microelectronics, Microsystems and Nanotechnology 2000 (MMN 2000) eds. A. G. Nassiopoulou X. Zianni, World Scientific (Singapore) 183-186 (2001)
  18. Vitrification of Lead – rich Solid Industrial Wastes G. Kaimakamis, P. Kavouras, Th. Ioannidis, Th. Kehagias, E. Pavlidou, Ph. Komninou, S. Kokkou, I. Antonopoulos, M. Sofoniou, A. Zouboulis, C.P. Hadjiandoniou, A. Prakouras and Th. Karakostas, Proceedings of the 1st Balkan Conference on Glass Science and Technology, eds. G. Kordas and N.S. Vlachos, 455-460 (2001)
  19. Interaction between basal stacking faults and prismatic inversion domain boundaries in GaN, Ph. Komninou, J. Kioseoglou, E. Sarigiannidou, G.P. Dimitrakopulos, Th. Kehagias, K. Amimer, A. Georgakilas, G. Nouet, P. Ruterana and Th. Karakostas, Proceedings of MRS 2000 Fall meeting, Boston (USA), 2000, Mat. Res. Soc. Symp. 639, G3.44 (2001)
  20. Microstructure of GaN films grown by RF-Plasma Assisted Molecular Beam Epitaxy, Ph. Komninou, Th. Kehagias, J. Kioseoglou, E. Sarigiannidou, Th. Karakostas, G. Nouet, P. Ruterana, K. Amimer, S. Mikroulis and A. Georgakilas, Proceedings of MRS 2000 Fall meeting, Boston (USA), 2000, Mat. Res. Soc. Symp. 639, G3.47 (2001)
  21. Vitreous and vitroceramic stabilized materials from industrial solid wastes, P. Kavouras, Ph. Komninou, K. Chrissafis, G. Kaimakamis, S. Kokkou, K. Paraskevopoulos and Th. Karakostas, Proceedings of the Second Balkan Conference on Glass Science and Technology, Varna, Bulgaria, 76-82 (2002)
  22. X-ray absorption studies on glasses containing industrial wastes, F. Pinakidou, M. Katsikini, E.C. Paloura, P. Kavouras, Ph. Komninou and Th. Karakostas, Proceedings of the Second Balkan Conference on Glass Science and Technology, Varna, Bulgaria, 483-488 (2002)
  23. Growth and properties of quaternary InAlGaN heterostructures, A. Georgakilas, E. Dimakis, M. Androulidaki, K. Tsagaraki, E. Bellet-Amalric, D. Jalabert, Ph. Komninou, N. T. Pelekanos, 12th European Workshop on Heterostructure Technology “HETECH 2003”, 12-15 October 2003, La Casona del Pinar, San Rafael, Segovia, Spain
  24. Molecular beam epitaxy of InN films and micro-columns on Ga-face GaN (0001), E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias, A. Georgakilas, 13th European Workshop on Heterostructure Technology “HETECH 2004”, Koutouloufari, Greece, October 2004
  25. Controlled growth of porous networks in InP, A. Delimitis, Ph. Komninou, Th. Kehagias, Th. Karakostas, P. Gladkov, D. Nohavica, Proceedings of the EUROMAT 2005 European Congress on Advanced Materials and Processes, Prague, September 2005
  26. Glass-ceramic materials from electric arc furnace dust, P. Kavouras, Th. Kehagias, I. Tsilika, K. Chrissafis, G. Kaimakamis, D. Papadopoulos, S. Kokkou, Ph. Komninou, Th. Karakostas, Proceedings of the 1st International Conference on Engineering for Waste Treatment, Albi - France, 17-19 May 2005
  27. Study of glasses containing Zn- and Fe- contaminated Electric Arc Furnace Dust by means of μ-XRF mapping and μ-XAFS, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Th. Kehagias, Ph. Komninou, Th. Karakostas and A. Erko, Proceedings of the 1st International Conference on Engineering for Waste Treatment, Albi - France, 17-19 May 2005
  28. Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE, A. Delimitis, Ph. Komninou, Th. Kehagias, Th. Karakostas, E. Dimakis, A. Georgakilas and G. Nouet in A.G. Cullis and J.L. Hutchison (Eds.), Microscopy of Semiconducting Materials - Proceedings of the 14th Conference, Springer Proceedings in Physics vol. 107, 71 (2006)
  29. What does an (a+c)dislocation core look like in wurtzite GaN ?, I. Belabbas, A. Béré, J. Chen, S. Petit, M.A. Belkhir, P. Ruterana, G. Nouet and Ph. Komninou, MRS Symposium Proceeding Series 892, FF26-10.1 – 10.6 (2006)
  30. Nanostructural Morphology of InP Organized Pore Networks, A. Delimitis, D. Nohavica, P. Gladkov, Th. Kehagias, Th. Karakostas and Ph. Komninou, Proceedings of the 16th IMC International Microscopy Congress, Sapporo, Japan, September 2006
  31. Epitaxial Growth of GaN Nanowires on Al2O3 (0001) by Molecular Beam Epitaxy, Th. Kehagias, Ph. Komninou, G. Dimitrakopoulos, C. Cheze, L. Geelhaar, W. Weber, R. Averbech, H. Riechert and Th. Karakostas, Proceedings of the 16th IMC International Microscopy Congress, Sapporo, Japan, September 2006
  32. Physical Properties of Model Glasses and Glass-Ceramics Formulated from Vitrified Waste Products, P. Kavouras, Th. Kehagias, K. Chrissafis, K. Paraskevopoulos, Ph. Komninou, Th. Karakostas, Proceedings of the 16th IMC International Microscopy Congress, Sapporo, Japan, September 2006
  33. Relative stability of different core configurations of the 90° Shockey partial dislocation in wurtzite GaN, I. Belabbas, G. Dimitrakopoulos, J. Kioseoglou, A. Bere, J. Chen, Ph. Komninou, P. Ruterana and G. Nouet, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 73
  34. Acceptor-like threading edge dislocations in InN, E. Dimakis, A. Delimitis, Ph. Komninou, J. Domagala, E. Iliopoulos and A. Georgakilas, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 74
  35. Plasma-Assisted molecular beam epitaxy of InN quantum dots on GaN (0001), E. Dimakis, E. Iliopoulos, K. Tsagaraki, A. Delimitis, Ph. Komninou, H. Kirmse, W. Neumann, and A. Georgakilas, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 75
  36. Electron microscopy characterization of an AlN/GaN multilayer grown by plasma assisted MBE, G. Dimitrakopoulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, A. Delimitis, Th. Karakostas, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 93-94
  37. Analysis of partial dislocation core structure in GaN: an implementation of the integrated methodology for the microstructural and energetical characterization of interfacial defects, J. Kioseoglou, G. Dimitrakopoulos, Ph. Komninou, Th. Kehagias and Th. Karakostas, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 100-101
  38. From 2D HRTEM images to 3D atomistic/continuum models of film/substrate interfacial regions, T. D. Young, J. Kioseoglou, P. Dluzewski and Ph. Komninou, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 102
  39. Microstructural characterization of InN-based thin films and nanostructures grown on GaN templates by molecular beam epitaxy, A. Delimitis, J. Arvanitidis, M. Katsikini, E. C Paloura, F. Pinakidou, S. Ves, Th. Kehagias, E. Dimakis, A. Georgakilas and Ph. Komninou, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 109-110
  40. Controlled growth of GaN nanowires on (0001) Al2O3 by MBE, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopoulos, C. Cheze, L. Geelhaar, H. Riechtert and.Th. Karakostas, Proceedings of the European Workshop on III-Nitride Semiconductor Materials and Devices, Crete, 18-20 September 2006, pp. 114-115
  41. Self-organization of InP porous networks in the nanoscale, A. Delimitis, P. Gladkov, D. Nohavica, Th. Kehagias, Ph. Komninou, and Th. Karakostas, Proceedings of ΝΝ06, 3rd Workshop on Nanosciences & Nanotechnologies, 62 (2006)
  42. Strain fields and structural properties at nanoscale level in AlN/GaN heterostructures, G.P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, A. Delimitis, Th. Karakostas, E. Iliopoulos, A. Adikimenakis, G. Tsiakatouras, and A. Georgakilas, Proceedings of ΝΝ06, 3rd Workshop on Nanosciences & Nanotechnologies, 104 (2006)
  43. Atomic configuration of partial dislocations by quantitative HRTEM analysis, J. Kioseoglou, G. P. Dimitrakopoulos, Ph. Komninou, Th. Kehagias and Th. Karakostas, Proceedings of ΝΝ06, 3rd Workshop on Nanosciences & Nanotechnologies, 23 (2006)
  44. Catalyst driven growth of GaN nanowires on Al2O3 (0001) by MBE, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopoulos, C. Cheze, L. Geelhaar, H. Riechtert and Th. Karakostas , Proceedings of ΝΝ06, 3rd Workshop on Nanosciences & Nanotechnologies, 56 (2006)
  45. Nano-analysis of an InAlGaN/GaN multiple quantum well heterostructure, G.P. Dimitrakopulos, Ph. Komninou, J. Kioseoglou, Th. Kehagias, Th. Karakostas, E. Dimakis, A. Georgakilas, G. Nouet, Proceedings of ΝΝ06, 3rd Workshop on Nanosciences & Nanotechnologies, 118 (2006)
  46. Gradient elasticity of localized boundary dislocations in nanosized stacking faults in GaN, J. Kioseoglou, G. P. Dimitrakopoulos, Ph. Komninou, Th. Karakostas, I. konstantopoulos, M. avlonitis, E.C. Aifantis, Proceedings of ΝΝ06, 3rd Workshop on Nanosciences & Nanotechnologies, 133 (2006)
  47. Core structure of the perfect 60° dislocation in hexagonal gallium nitride, I. Belabbas, Ph.Komninou, A. Béré, J.Chen, P. Ruterana and G.Nouet, International Workshop on Nitride Semiconductors “IWN2006”, Kyoto, Japan, October 22 – 27, 2006
  48. Growth Dependent Formation of Threading Dislocations in InN (0001) Films and Their Effect on Electrical Properties, E. Dimakis, A. Delimitis, P. Komninou, E. Iliopoulos and A. Georgakilas, International Workshop on Nitride Semiconductors “IWN2006”, Kyoto, Japan, October 22 – 27, 2006
  49. Strain Relaxation and Defect Formation in the Heteroepitaxy of AlN/GaN and AlN/GaN Multilayers by Plasma Assisted Molecular Beam Epitaxy, E. Ilipoulos, A. Adikimenakis, G. Tsiakatouras, G. Dimitrakopoulos, P. Komninou, G. Nouet and A. Georgakilas, International Workshop on Nitride Semiconductors “IWN2006”, Kyoto, Japan, October 22 – 27, 2006
  50. Electron Microscopy Characterization of a Graded AlN/GaN Multilayer grown by Plasma-Assisted MBE, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, A. Delimitis, J. Kioseoglou, S.-L. Sahonta, E. Iliopoulos, A. Georgakilas, and Th. Karakostas, Microscopy of Semiconducting Materials - Proceedings of the 15th Conference, Springer Proceedings in Physics
  51. Residual strain variations in MBE-grown InN thin films, A. Delimitis, Ph. Komninou, J. Arvanitidis, M. Katsikini, S.-L. Sahonta, E. Dimakis, S. Ves, E. C. Paloura, F. Pinakidou, G. Nouet, A. Georgakilas and Th. Karakostas Microscopy of Semiconducting Materials - Proceedings of the 15th Conference, Springer Proceedings in Physics
  52. Epitaxial growth of single crystalline GaN nanowires on (0001) Al2O3, Th. Kehagias, Ph. Komninou, G.P. Dimitrakopulos, S.-L. Sahonta, C. Chèze, L. Geelhaar, H. Riechtert and Th. Karakostas, Microscopy of Semiconducting Materials - Proceedings of the 15th Conference, Springer Proceedings in Physics
  53. Extended Defects in InGaN/GaN Quantum Well Heterostructure LEDs Grown, S. –L. Sahonta,G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, Th. Karakostas, C. Salcianu, E. J. Thrush, Proceedings of the 8th Multinational Congress on Microscopy 2007
  54. Influence of Nitridation Conditions on an R-plane Sapphire Substrate on the Structural Quality of a Non-polar Gallium Nitride Epilayer, J. Smalc, Ph. Komninou, S. -L. Sahonta, Th. Karakostas, G. Tsiakatouras, A. Georgakilas, Proceedings of the 8th Multinational Congress on Microscopy 2007
  55. Atomistic/continuum modelling of the GaN/sapphire interfacial region, T. D. Young, P. Dluzewski, J. K ioseoglou, G. P. Dimitrakopulos, and Ph. Komninou, Proceedings “Nitride based nanostructures” International Workshop, Berlin. Germany, February 06-09 2007
  56. Crystal properties of GaN nanowires grown by molecular beam epitaxy Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas, G. Nouet, C. Cheze, L. Geelhaar, and H. Riechert, Proceedings “Nitride based nanostructures” International Workshop, Berlin. Germany, February 06-09 2007
  57. Structural characterization of InGaN/GaN quantum wells on (0001) sapphire by HRTEM, S. –L. Sahonta, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, C. Salcianu, and T. Thrush, Proceedings “Nitride based nanostructures” International Workshop, Berlin. Germany, February 06-09 2007
  58. InN thin films and nanostructures grown on (0001) GaN by molecular beam epitaxy, A. Delimitis, Ph. Komninou, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, J. Arvanitidis, M. Katsikini, E. C. Paloura, S. Ves, Th. Karakostas, G. Nouet, E. Dimakis and A. Georgakilas, Proceedings “Nitride based nanostructures” International Workshop, Berlin. Germany, February 06-09 2007
  59. Reconstrcutions at the 90° partial dislocation core in wurtzite GaN I. Belabbas, G. Dimitrakopulos, J. Kioseoglou, A. Bere, J. Chen, Ph. Komninou, P. Ruterana and G. Nouet, Photonics West 2007 “SPIE2007”, San Jose, California (USA), January 23-25 2007
  60. Interfacial and structural properties of GaN Nanowires grown on Si by Molecual Beam Epitaxy Ph. Komninou, Th. Kehagias, G.P. Dimitrakopulos, C. Cheze, L. Geelhaar, H. Riechert, H. Kirmse, W. Neumann, and Th. Karakostas, XII International Conference on Integranular and Interphase Boundaries in Material (iib), Barcelona, Spain, 10-13 July 2007
  61. Energetic calculations of the AlN/GaN interface, E. Kalessaki, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, 3rd International Conference Micro&Nano 2007, Athens, Greece, 18-21 November 2007
  62. Magnesium incorporation at InN (0001) and (000-1) surfaces: A first-principles study, A. Belabbes, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, 3rd International Conference Micro&Nano 2007, Athens, Greece, 18-21 November 2007
  63. Exsolution phenomena in glass-ceramic systems, I. Tsilika, Ph. Komninou, G. P. Dimitrakopulos, Th. Kehagias, and Th. Karakostas, 14th European Microscopy Congress (2008), S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 537–538, DOI:10.1007/978-3-540-85226-1_269, © Springer-Verlag Berlin Heidelberg 2008
  64. Effects of stress-relieving AlN interlayers in GaN-on-Si grown by plasma-assisted molecualr beam epitaxy, A. Adikimenakis, S. L. Sahonta, G. P. Dimitrakopulos, J. Domagala, Ph. Komninou, and A. Georgakilas, Mater. Res. Soc. Symp. Proc. Vol. 1068, Materials Research Society 1068-Co6-04 2008
  65. In-situ investigation of the growth mechanisms of GaN-nanowires, C. Chèze, L. Geelhaar, Ph. Komninou, Th. Kehagias, Th. Karakostas, W. Weber, H. Riechert, E-MRS proceedings 2007
  66. Nitridation processes in amorphous, metastable and nanostructured films and surfaces of bimetallic-based systems, G.M. Matenoglou, P. Kavouras, Ph. Komninou, G.A. Evangelakis, C. Kosmidis, and P. Patsalas, E-MRS proceedings 2007
  67. Structural and chemical features of the amorphous carbon matrix and the metal inclusions in pulsed laser deposited a-C:metal nanocomposite films, G.M. Matenoglou, D. Anagnostopoulos, A. Wildes, P. Kavouras, Ph. Komninou, L. Koutsokeras, and P. Patsalas, E-MRS proceedings 2007
  68. Microstructure of defects in InGaN/GaN quantum well heterostructures, S.-L. Sahonta, Ph. Komninou, G.P. Dimitrakopulos, Th. Kehagias, Th. Karakostas, C. Salcianu, E.J. Thrush, J. Phys.: Conf. Ser. 126, 012048 (doi: 10.1088/1742-6596/126/1/012048)
  69. From 2D HRTEM images to 3D atomistic/continuum models of GaN/Al2O3 interfacial region, T. D. Young, P. Dłuzewski, J. Kioseoglou, and Ph. Komninou, Multiscale Materials Modeling proceedings-symposium 2 Nanomechanics and Micromechanics 253 (2007)
  70. a-edge threading dislocations and planar defects in III(Al,Ga,In)-N, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, Autumn School on Materials Science and Electron Microscopy 2007 "Microscopy - advanced tools for tomorrow’s materials" proceedings (2007)
  71. Atomistic simulations and HRTEM study on (Al,In)N/GaN interfaces, E. Kalessaki, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, Autumn School on Materials Science and Electron Microscopy 2007 "Microscopy - advanced tools for tomorrow’s materials" proceedings (2007)
  72. Electron Microscopy Characterization of Strain relaxation in a Graded AlN/GaN Multilayer, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta, J. Kioseoglou, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas, and Th. Karakostas, Autumn School on Materials Science and Electron Microscopy 2007 "Microscopy – advanced tools for tomorrow’s materials" proceedings (2007)
  73. Transmission Electron Microscopy of AlN/GaN Heterostructures on Silicon, S.-L. Sahonta, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, J. Kioseoglou, Th. Karakostas, A. Adikimenakis and A. Georgakilas, Autumn School on Materials Science and Electron Microscopy 2007 "Microscopy - advanced tools for tomorrow’s materials" proceedings (2007)
  74. Structural investigation of non-polar gallium nitride layers deposited on r-plane sapphire, J.Smalc-Koziorowska, Ph. Komninou, J. Kioseoglou, S.-L. Sahonta, Th. Karakostas, G. Tsiakatouras, A. Georgakilas, Autumn School on Materials Science and Electron Microscopy 2007 "Microscopy - advanced tools for tomorrow’s materials" proceedings (2007)
  75. Core models of a-edge threading dislocations in wurtzite III(Al,Ga,In)-Nitrides, J. Kioseoglou, Ph. Komninou, and Th. Karakostas, Extended Defects in Semiconductors (2008)
  76. Relaxed structural configurations in AlN/GaN and InN/GaN Interfaces, J. Kioseoglou, E. Kalessaki, L. Lymperakis, Ph. Komninou, and Th. Karakostas, Extended Defects in Semiconductors (2008)
  77. Misfit analysis of the InN/GaN interface through HRTEM image simulations, J. Kioseoglou, G.P. Dimitrakopulos, Th. Kehagias, E. Kalessaki, Ph. Komninou, and Th. Karakostas, 14th European Microscopy Congress (2008) S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 651–652, DOI: 10.1007/978-3-540-85226-1_326, © Springer-Verlag Berlin Heidelberg 2008
  78. A method for atomistic/continuum analysis of large HRTEM images, A. Belkadi, G. P. Dimitrakopulos, J. Kioseoglou, G.Jurczak, T. D. Young, P. Dluzewski, and Ph. Komninou, 14th European Microscopy Congress (2008) S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 639–640, DOI: 10.1007/978-3-540-85226-1_320, © Springer-Verlag Berlin Heidelberg 2008
  79. Microstructure and growth model of MBE-grown InAlN thin films, S. –L. Sahonta, A. Adikimenakis, G. P. Dimitrakopulos, Ph. Komninou, H. Kirmse, E. Pavlidou, E. Iliopoulos, A. Georgakilas, W. Neumann, and Th. Karakostas, 14th European Microscopy Congress (2008) S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 55–56, DOI: 10.1007/978-3-540-85226-1_28, © Springer-Verlag Berlin Heidelberg 2008
  80. Epitaxial Orientations of GaN Grown on R-plane Sapphire, J. Smalc-Koziorowska, G.P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta, G. Tsiakatouras and A. Georgakilas, 14th European Microscopy Congress (2008) S. Richter, A. Schwedt (Eds.): EMC 2008, Vol. 2: Materials Science, pp. 53–54, DOI: 10.1007/978-3-540-85226-1_27, © Springer-Verlag Berlin Heidelberg 2008
  81. Epitaxial Orientations of Gallium Nitride Grown on Nitrided r-plane Sapphire By Molecular Beam Epitaxy, J.Smalc-Koziorowska, G. Dimitrakopulos, Ph. Komninou, S.-L. Sahonta, G. Tsiakatouras, A.Georgakilas, 5th International Conference on Nanosciences and Nanotechnologies - NN08 (2008), Thessaloniki, July 2008
  82. Structural Characterisation of PAMBE-Grown InAlN Films on Sapphire (0001) By Transmission Electron Microscopy, S.-L. Sahonta, A. Adikimenakis, Ph. Komninou, G. P. Dimitrakopulos, E. Iliopoulos, A. Georgakilas, and Th. Karakostas, 5th International Conference on Nanosciences and Nanotechnologies - NN08 (2008), Thessaloniki, July 2008
  83. Magnesium adsorption and incorporation at InN (0001) and (0001) surfaces: A first-principles study, A. Belabbes, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, 5th International Conference on Nanosciences and Nanotechnologies - NN08 (2008), Thessaloniki, July 2008
  84. A Method for Atomistic/Continuum Analysis of Large HRTEM Images, A. Belkadi, G. P. Dimitrakopulos, J. Kioseoglou, G.Jurczak, T. D. Young, P. Dluzewski and Ph. Komninou, 5th International Conference on Nanosciences and Nanotechnologies - NN08 (2008), Thessaloniki, July 2008
  85. Atomic Scale Modelling and HRTEM Investigation of (Al,In)N/GaN Interfaces, J. Kioseoglou, E. Kalessaki, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, 5th International Conference on Nanosciences and Nanotechnologies - NN08 (2008), Thessaloniki, July 2008
  86. Electronic structure of 1/6 [20-23] partial dislocations in wurtzite GaN, J. Kioseoglou, E. Kalessaki, L. Lymberakis, Ph. Komninou, and Th. Karakostas, International Workshop on Nitride semiconductors Montreaux, Switzerland, 06-10 October 2008
  87. III-nitride quantum dot chemical sensors, M. Eickhoff, O. Weidemann, E. Monroy, G. Mueller, A. Friedberger, Ph. Komninou, and M.Stutzmann International Workshop on Nitride semiconductors Montreaux, Switzerland, 06-10 October 2008
  88. Energetic of oxygen adsorption and incorporation at InN polar surfaces: A first principles study, A. Belabbes, J. Kioseoglou, P. Komninou, and T. Karakostas, International Workshop on Nitride semiconductors Montreaux, Switzerland, 06-10 October 2008
  89. Plasma Assisted Molecular Beam Epitaxy of a-plane GaN on r-plane Sapphire, G. Tsiakatouras, J. Smalc-Koziorowska, K. Tsagaraki, M. Androulidaki, G. P. Dimitrakopoulos, P. Komninou, and A. Georgakilas International Workshop on Nitride semiconductors Montreaux, Switzerland, 06-10 October 2008
  90. A nonlinear finite element and atomistic modelling of dislocations in semiconductor structures, P. Dłużewski, A. Belkami, T. D. Young, G. Dimitrakopulos, and Ph. Komninou, Proceedings of the 18th International Conference on Computer Methods in Mechanics, Zielona Gora, Poland, May 2009
  91. Effect of surface kinetics in the growth of a-plane GaN on r-plane sapphire by molecular beam epitaxy, G. Tsiakatouras, K. Tsagaraki, J. Domagala, J. Smalc-Koziorowska, G. P. Dimitrakopulos, Ph. Komninou, E. Iliopoulos and A. Georgakilas,18th European Workshop on Heterostructure Technology, Ulm, Germany, November 2009
  92. Nanoscale Analysis of Interfaces Between GaN Nanowires and Si(111) and Si(001) Substrates, P. Komninou, Th. Kehagias, G. P. Dimitrakopoulos, H. Kirmse, W. Neumann, C. Chèze, L. Geelhaar, H.Riechert, and T. Karakostas, International Workshop on Nitride semiconductors Montreaux, Switzerland, 06-10 October 2008
  93. Compositional Nano-Modulations and Growth Mechanism of InxAl1-xN alloys by Molecular Beam Epitaxy, S.-L. Sahonta, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, A. Adikimenakis, E. Iliopoulos, A. Georgakilas, and Ph.Komninou, 6th International Conference on Nanosciences and Nanotechnologies - NN09 (2009), Thessaloniki, July 2009
  94. Atomistic simulations and HRTEM identification of the (10-10)/(2-1-12) boundary in GaN, J. Kioseoglou, G. P. Dimitrakopulos, J. Smalc-Koziorowska, Ph. Komninou and Th. Karakostas, 6th International Conference on Nanosciences and Nanotechnologies - NN09 (2009), Thessaloniki, July 2009
  95. Structural properties of semipolar and ultra-small polar GaN/AlN Quantum Dots, E. Kalesaki, Th. Kehagias, A.Lotsari, J. Kioseoglou, L. Lahourcade, E. Monroy, G. P. Dimitrakopulos, Ph. Komninou, 6th International Conference on Nanosciences and Nanotechnologies - NN09 (2009), Thessaloniki, July 2009
  96. Microstructure of InN grown on Si(111) by plasma-assisted MBE using a double buffer layer, G. P. Dimitrakopulos, Th. Kehagias, A. O. Ajagunna, J. Kioseoglou, G. Nouet, I. Kerasiotis, A. Georgakilas, Th. Karakostas, Ph. Komninou, E-MRS 2009 Fall meeting
  97. Electron microscopy of InGaN nanorods spontaneously grown on Si (111) substrates, Th. Kehagias, I. Kerasiotis, A. P. Vajpeyi, A. Georgakilas, and Ph. Komninou, E-MRS 2009 Fall meeting
  98. Structural models of GaN quantum dots in semipolar AlN, E. Kalesaki, J. Kioseoglou, Th. Kehagias, A. Lotsari, L. Lahourcade, E. Monroy, H. Kirmse, W. Neumann, G. P. Dimitrakopulos, Ph. Komninou, E-MRS 2009 Fall meeting
  99. Interfacial structure of semipolar AlN grown on m-plane sapphire by PAMBE, Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G. P. Dimitrakopulos, and Ph. Komninou, E-MRS 2009 Fall meeting
  100. The (10-10)/(2-1-12) grain boundary in nonpolar GaN: Atomic structure and influence on defect introduction, J. Kioseoglou, G. P. Dimitrakopulos, J. Smalc-Koziorowska, Ph. Komninou, Th. Karakostas, E-MRS 2009 Fall meeting
  101. Quantitative analysis of semipolar GaN Quantum Dots in AlN matrix, E. Kalesaki, Th. Kehagias, J. Kioseoglou, A.Lotsari, L. Lahourcade, E. Monroy, H. Kirmse, W. Neumann, G. P. Dimitrakopulos, Ph. Komninou, Electron Microscopy and Multiscale Modelling - EMMM09, Zurich, Switzerland, 27-30 October 2009
  102. Integrated analysis of grain boundaries with complex arrays of interfacial dislocations in III-nitrides, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, J. Smalc-Koziorowska, Ph. Komninou, and Th. Karakostas, Electron Microscopy and Multiscale Modelling - EMMM09, Zurich, Switzerland, 27-30 October 2009
  103. HRTEM observations and ab initio calculations on InN/GaN and InGaN/GaN Quantum Well heterostructures, E. Kalesaki, J. Kioseoglou, S. –L. Sahonta, Th. Kehagias, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, Electron Microscopy and Multiscale Modelling - EMMM09, Zurich, Switzerland, 27-30 October 2009
  104. Dislocation density tensor on HRTEM by the geometric phase analysis and the gradient elasticity theory, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, Electron Microscopy and Multiscale Modelling - EMMM09, Zurich, Switzerland, 27-30 October 2009
  105. Mechanisms of Indium segregation in MOVPE and MBE grown InAlN, Th. Kehagias, S. –L. Sahonta, G. P. Dimitrakopoulos, J. Kioseoglou, H. Kirmse, W. Neumann, C. Giesen, M. Heuken, A. Adikimenakis, A. Georgakilas, Th. Karakostas and Ph. Komninou, Electron Microscopy and Multiscale Modelling - EMMM09, Zurich, Switzerland, 27-30 October 2009
  106. Purely radiative recombination in GaN/AlN QDs with microsecond decay times up to room temperature, J. Renard, E. Monroy, Th. Kehagias, Ph. Komninou, H. Mariette, and B. Gayral , 8th International Workshop on Nitride Semiconductors (ICNS-8), ICC Jeju, Corea, 18-23 October 2009
  107. Optical performance of semipolar GaN/AlN Quantum Dots, L. Lahourcade, T. Kehagias, S. Valdueza-Felip, G. P. Dimitrakopulos, Ph. Komninou, and E. Monroy, 8th International Workshop on Nitride Semiconductors (ICNS-8), ICC Jeju, Corea, 18-23 October 2009
  108. Bandgap and optical properties of InAlN films lattice matched to GaN grown by MOCVD and RF-MBE, E. Iliopoulos, A. Adikimenakis, M. Andoulidaki, A. O. Ajagunna, M. Heuken, C. Giesen, J. F. Carlin, M. A. Di Forte-Poisson, S. L. Delage, Th. Kehagias, Ph. Komninou, and A. Georgakilas, 8th International Workshop on Nitride Semiconductors (ICNS-8), ICC Jeju, Corea, 18-23 October 2009
  109. Structural properties of GaN Quantum Dots in semipolar AlN, E. Kalesaki, L. Lahourcade, J. Kioseoglou, Th. Kehagias, A. Lotsari, H. Kirmse, W. Neumann, E. Monroy, G. P. Dimitrakopulos, Th. Karakostas, and Ph. Komninou, 8th International Workshop on Nitride Semiconductors (ICNS-8), ICC Jeju, Corea,18-23 October 2009
  110. Heteroepitaxial structure and defects of III-Nitride epilayers grown on r-plane and m-plane sapphire, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, L. Lahourcade, J. Smalc-Koziorowska, G. Tsiakatouras, A. Lotsari, E. Kalesaki, Th. Karakostas, E. Monroy, A. Georgakilas, and Ph. Komninou, 8th International Workshop on Nitride Semiconductors (ICNS-8), ICC Jeju, Corea, 18-23 October 2009
  111. Indium incorporation mechanisms in MOVPE and MBE grown InAlN thin films, Th. Kehagias, S. –L. Sahonta, G. P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, W. Neumann, C. Giesen, M. Heuken, A. Adikimenakis, A. Georgakilas, and Ph. Komninou, 8th International Workshop on Nitride Semiconductors (ICNS-8), ICC Jeju, Corea, 18-23 October 2009
  112. AlN based nanocomposites grown by Pulsed Laser Deposition and Sputtering for Photonic applications, H. Zoubos, G. Karras, A. Lotsari, E. Lidorikis, Ch. E. Lekka, G. P. Dimitrakopulos, Ph. Komninou, G. Evangelakis, C. Kosmidis and P. Patsalas, ICO PHOTONICS 2009
  113. ELNES study of AlN, AlxIn1-xN and AlNyO1-y, M.M. Soumelidou, E. Kalesaki, J. Kioseoglou, H. Kirmse, W. Neumann, Ph. Komninou and Th. Karakostas, “Frontiers in EELS”, Vienna University of Technology, Austria, March 2010
  114. Intergranular boundaries in non-polar and semi-polar III-nitride heteropeitaxy: Introduction mechanisms, energetics and role as defect sources, Ph. Komninou, J. Kioseoglou, Th. Kehagias, E. Kalesaki, A. Lotsari, J. Sma;c-Koziorowska, Th. Karakostas, G. P. Dimitrakopulos, XIII International Conference on Intergranular and Interphase Boundaries, Mie, Japan, 27 June – 2 July 2010
  115. Structural properties of Monolayer thick InxGa1-Xn/GaN heterostructures, E. Kalesaki, J. Kioseoglou, S. –L. Sahonta, Th. Kehagias, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, XIII International Conference on Intergranular and Interphase Boundaries, Mie, Japan, 27 June – 2 July 2010
  116. Morphology and strain state determination of semipolar GaN Quantum Dots in AlN matrix, E. Kalesaki, J. Kioseoglou, Th. Kehagias, E. Monroy, H. Kirmse, W. Neumann, P. Dluzewski, G. P. Dimitrakopulos, Ph. Komninou, XIII International Conference on Intergranular and Interphase Boundaries, Mie, Japan, 27 June – 2 July 2010
  117. Morphology and Interfacial Structure of InGaN Nanodisks Grown in GaN Nanorods, Th. Kehagias, T. Koukoula, G.P. Dimitrakopulos, E. Kalesaki, H. Kirmse, W. Neumann, F. Furtmayr, M. Eickhoff, Th. Karakostas, Ph. Komninou, EDS 2010
  118. Structural characteristics and strain state of semipolar (11-22) GaN Quantum Dots in AlN matrix, G. P. Dimitrakopulos, E. Kalesaki, J. Kioseoglou, Th. Kehagias, A. Lotsari, L. Lahourcade, E. Monroy, H. Kirmse, W. Neumann, G. Jurczak, T. D. Young, P. Dluzewski, Ph. Komninou, and Th. Karakostas, EDS 2010
  119. Effect of a-edge threading dislocations on the electronic properties of InN, E. Kalesaki, J. Kioseoglou, L. Lymperakis, Ph. Komninou, and Th. Karakostas, EDS 2010
  120. Indium adsorption and incorporation on polar AlN , E. Kalesaki, J. Kioseoglou, Ph. Komninou, and Th. Karakostas, EDS 2010
  121. Atomic structure of nonpolar-semipolar boundaries in III-Nitride semiconductors, J. Kioseoglou, G. P. Dimitrakopulos, J. Smalc-Koziorowska, Th. Kehagias, A. Lotsari, Th. Karakostas, and Ph. Komninou, EDS 2010
  122. A DFT investigation of Frank- Shockley partial dislocations in wurtzite GaN, J. Kioseoglou, E. Kalesaki, L. Lymperakis, J. Neugebauer, Ph. Komninou, and Th. Karakostas, EDS 2010
  123. Symmetry and nonlinear mechanics of a semipolar quantum dot, T. D. Young, G. Jurczak, P. Dłuzewski, E. Kalesaki, G. P. Dimitrakopulos, Ph. Komninou, 37th Solid Mechanics Conference, Warsaw, Poland, 6-10 September 2010
  124. Structural properties of Semipolar III-Nitride Quantum Dots, G. P. Dimitrakopulos, E. Kalesaki, A. Lotsari, Th. Kehagias, J. Kioseoglou, A. Das, L. Lahourcade, E. Monroy, I. Hausler, H. Kirmse, W. Neumann, Ph. Komninou, and Th. Karakostas, 19th European Workshop on Heterostructure Technology (HETECH), October 2010
  125. InGaN Nanodiscs Embedded in GaN Nanorods Grown by MBE, Th. Kehagias, T. Koukoula, G.P. Dimitrakopulos, E. Kalesaki, H. Kirmse, W. Neumann, F. Furtmayr, M. Eickhoff, Th. Karakostas, Ph. Komninou, 19th European Workshop on Heterostructure Technology (HETECH), October 2010
  126. Nanoscale Structure of InGaN Quantum Dot Superlattices Grown by MBE, T. Koukoula, Th. Kehagias, A. Lotsari, A. Das, E. Monroy, G.P. Dimitrakopulos and Ph. Komninou, 19th European Workshop on Heterostructure Technology (HETECH), October 2010
  127. Surface Thermodynamics of (11-22) and (11-2-2) Semipolar AlN Surfaces, E. Kalesaki, L. Lymperakis, J. Kioseoglou, Ph. Komninou and Th. Karakostas, IWN 2010, September 2010
  128. Structural Characteristics and Strain State of Semipolar (11-22) GaN/AlN Quantum Dots, G. P. Dimitrakopulos, E. Kalesaki, J. Kioseoglou, Th. Kehagias, A. Lotsari, L. Lahourcade, E. Monroy, H. Kirmse, W. Neumann, G. Jurczak, T. D. Young, P. Dluzewski, Ph. Komninou and Th. Karakostas, IWN 2010, September 2010
  129. Optical and Structural Properties of InGaN/GaN Nanostructures Grown in GaN Nanowires, F. Furtmayr, Th. Kehagias, G. P. Dimitrakopulos, Ph. Komninou, J. Teubert, M.Stutzmann and M. Eickhoff, IWN 2010, September 2010
  130. Plasma-assisted MBE Growth of Semipolar (11-22) InGaN Layers and GaN/InGaN Quantum Dots, A. Das, A. Lotsari, S. Magalhaes, P. Sinha, G. P. Dimitrakopulos, T. Kehagias, P. Komninou, K. Lorenz, E. Alves and E. Monroy, IWN 2010, September 2010
  131. Nucleation, growth and microstructure of hexagonal InN with atomically smooth surface on Si(111), A. O. Ajagunna, Th. Kehagias, T. koukoula, K. Tsagaraki, M. Kayambaki, M. Androulidaki, Ph. Komninou, and A. Georgakilas, Micro&Nano 2010 International Conference, December 2010
  132. Nanoscale mechanisms of misfit accommodation and defect introduction in nonpolar and semipolar III-N heteroepitaxy, G. Dimitrakopulos, J. Smalc-Koziorowska, A. Lotsari, J. Kioseoglou, Th. Kehagias, Th. Karakostas, Ph. Komninou, Micro&Nano 2010 International Conference, December 2010
  133. Structure and morphology of InGaN nanodiscs set-in GaN nanorods, Th. Kehagias1 T. Koukoula, G. P. Dimitrakopulos, E. Kalesaki, H. Kirmse, W.Neumann, F. Furtmayr, M. Eickhoff, Th. Karakostas and Ph. Komninou, Micro&Nano 2010 International Conference, December 2010
  134. Formation of single-crystal semipolar (1011) InN and polar (0001) InN heterostructures on r-plane sapphire, A. O. Ajagunna, K. Tsagaraki, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, M. Androulidaki, Ph. Komninou, and A. Georgakilas, Micro&Nano 2010 International Conference, December 2010
  135. Structure of asymmetric V-defects in semipolar InGaN grown by MBE, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. Das, E. Monroy and Ph. Komninou, Micro&Nano 2010 International Conference, December 2010
  136. Polar and Semipolar InGaN Quantum Dots, A. Lotsari, T. Koukoula, Th. Kehagias, A. Das, E. Monroy, G. P. Dimitrakopulos, Ph. Komninou, Micro&Nano 2010 International Conference, December 2010
  137. Microstructural evolution and anisotropy in MBE-grown a-plane GaN epilayers on r-plane sapphire, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, M. Katsikini, J. Arvanitidis, D. Christofilos, G. Tsiakatouras, A. Georgakilas, and Ph. Komninou, Micro&Nano 2010 International Conference, December 2010
  138. Structural characterization of self assembled InGaN quantum dot superlattices grown by plasma assisted MBE, T. Koukoula, Th. Kehagias, A. Lotsari, A. Das, E. Monroy, G.P. Dimitrakopulos and Ph. Komninou, EDS 2010
  139. Indium incorporation mechanisms in MOVPE and MBE grown InAlN thin films, Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, E. Kalesaki, S. –L. Sahonta, H. Kirmse, W. Neumann, C. Giesen, M. Heuken, A. Adikimenakis, A. Georgakilas, Th. Karakostas and Ph. Komninou, iib2010
  140. Electron Energy Loss Spectroscopy of (In,Ga)N/GaN Heterostructure Nanowires: Influence of Strain and Composition, H. Kirmse, I. Haeusler, W. Neumann, Ph. Komninou, Th. Kehagias, M. Soumelidou, G.P. Dimitrakopulos, Th. Karakostas, F. Furtmayr, M. Eickhoff, 17th International Microscopy Congress (2010)
  141. Effect of Doping on Screw Threading Dislocations in AlN and Their Role as Conductive Nanowires, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, H. Kirmse, W. Neumann, Ph. Komninou and Th. Karakostas, ICNS-9 (2011)
  142. Strain and Structure of Semipolar (11-22) InGaN quantum dots, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, T. Koukoula, E. Kalesaki, A. Das, E. Monroy, and Ph. Komninou, ICNS-9 (2011)
  143. InGaN Nanostructures Set-in MBE Grown GaN Nanowires, Th. Kehagias, T. Koukoula, G.P. Dimitrakopulos, E. Kalesaki, F. Furtmayr, M. Eickhoff, H. Kirmse, W. Neumann, Th. Karakostas, and Ph. Komninou, ICNS-9 (2011)
  144. Effect of Edge Threading Dislocations on the n-type Conductivity of InN, E. Kalesaki, J. Kioseoglou, L. Lymperakis, Ph. Komninou and Th. Karakostas, ICNS-9 (2011)
  145. Ab initio study of semipolar III-nitride surface morphologies , E. Kalesaki, L. Lymperakis, J. Kioseoglou, Ph. Komninou, Th. Karakostas and J. Neugebauer, ICNS-9 (2011)
  146. Plasma-Assisted MBE of Semipolar (11-22)-Oriented III-Nitrides: 2D Layers and Nanostructures , A. Das, Y. Kotsar, L. Lahourcade, G. P. Dimitrakopulos, Th. Kehagias, A. Lotsari, T. Koukoula, Ph. Komninou, E. Monroy, ICNS-9 (2011)
  147. Structural characterization of nonpolar a-plane InN grown on r-plane sapphire by MBE, A.Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. O. Ajagunna, E. Iliopoulos, A.Georgakilas, Ph.Komninou, ICNS-9 (2011)
  148. Defect properties and anisotropy of nonpolar a-plane GaN films grown on r-plane sapphire by MBE, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, M. Katsikini, J. Arvanitidis, D.Christofilos, G.Tsiakatouras, S. Ves, A.Georgakilas, Ph. Komninou, ICNS-9 (2011)
  149. Structural and electronic properties of decorated screw dislocation cores in AlN, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, H. Kirmse, W. Neumann, Ph. Komninou and Th. Karakostas, NN11
  150. Nanoscale effects of threading dislocations on the n-type conductivity of InN, E. Kalesaki, J. Kioseoglou, L. Lymperakis, Ph. Komninou and Th. Karakostas, NN11
  151. InGaN Nanostructures Embedded in GaN Nanowires, T. Koukoula, Th. Kehagias, G.P. Dimitrakopulos, E. Kalesaki, J. Kioseoglou, F. Furtmayr, M. Eickhoff, I. Häusler, W. Neumann, Th. Karakostas, and Ph. Komninou, NN11
  152. Structure and Strain State of Polar and Semipolar InGaN Quantum Dots, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, T. Koukoula, A. Das, E. Monroy and Ph. Komninou, NN11
  153. Interfacial structures of (Al,In)N/GaN through atomistic modelling and HRTEM image simulations, J. Kioseoglou, E. Kalesaki, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou and Th. Karakostas, EMRS-2011 Fall meeting
  154. Nanostructure and identification of polytypes in InN nanocolumns, Th. Kehagias, J. Kioseoglou, T. Koukoula, A. O. Ajagunna, A. Georgakilas, and Ph. Komninou, EMRS-2011 Fall meeting
  155. Screw threading dislocations as conductive nanowires in AlN, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, H. Kirmse, W. Neumann, Ph. Komninou and Th. Karakostas, EMRS-2011 Fall meeting
  156. Nanostructure and strain state of InGaN quantum dot superlattices grown by MBE, T. Koukoula, Th. Kehagias, G. P. Dimitrakopulos, A. Lotsari, A. Das, I. Hausler, W. Neumann, E. Monroy, and Ph. Komninou, EMRS-2011 Fall meeting
  157. Threading dislocations in InN: Electronic structure and correlation with the n-type conductivity, E. Kalesaki, J. Kioseoglou, Ph. Komninou and Th. Karakostas, EMRS-2011 Fall meeting
  158. Nanoscale Properties of InGaN Quantum Disks Grown in GaN Nanowires, Th. Kehagias, T. Koukoula, G. P. Dimitrakopulos, J. Kioseoglou, E. Kalesaki, F. Furthmayr, M. Eickhoff, H. Kirmse, W. Neumann, Th. Karakostas and Ph. Komninou, EMRS-2011 Fall meeting
  159. Asymmetric V-defects in semipolar InGaN, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. Das, E. Monroy and Ph. Komninou, EMRS-2011 Fall meeting
  160. Structural anisotropic properties of a-plane (11-20) GaN and InN films grown on r-plane sapphire by PAMBE, G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, M. Katsikini, J. Arvanitidis, D. Christofilos, S. Ves, G. Tsiakatouras, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas, Th. Karakostas and Ph. Komninou, EMRS-2011 Fall meeting
  161. Self-assembled Quantum Dot Superlattices in Semipolar (11-22) III-Nitrides: Stoichiometry, Strain State and Morphology, G. P. Dimitrakopulos, A. Lotsari, E. Kalesaki, J. Kioseoglou, Th. Kehagias, L. Lahourcade, A. Das, E. Monroy, I. Hausler, H. Kirmse, W. Neumann, G. Jurczak , T. D. Young, P. Dluzewski, Th. Karakostas and Ph. Komninou, EMRS-2011 Fall meeting
  162. Structural Properties of Self-Assembled InGaN Quantum Dot Superlattices in Semipolar (11-22) GaN, G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, T. Koukoula, A. Das, E. Monroy and Ph. Komninou, MRS 2011 Fall meeting
  163. Screw Threading Dislocations as Conductive Nanowires in AlN: Role of Doping, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, Th. Karakostas and Ph. Komninou, MRS 2011 Fall meeting
  164. a-edge Threading Dislocations in InN: Energetic Stability and Effect on the Optoelectronic Properties, E. Kalesaki, J. Kioseoglou, L. Lymperakis, Ph. Komninou and Th. Karakostas, MRS 2011 Fall meeting
  165. Nanostructure of InGaN/GaN Superlattices in GaN Nanowires, Th.Kehagias, T. Koukoula, G. P. Dimitrakopulos, E.Kalesaki, J. Kioseoglou, F. Furtmayr, H. Kirmse, W. Neumann, M. Eickhoff, Th. Karakostas and Ph. Komninou, MRS 2011 Fall meeting
  166. InN/GaN Quantum Well Heterostructures: Structural Characteristics and Strain Induced Modifications of the Electronic Properties, J. Kioseoglou, E. Kalesaki, Ph. Komninou and Th. Karakostas, International Conference on Metallurgical Coatings and Thin Films, San Diego, CA, USA
  167. Crystal and Electronic Properties of Polytypes in InN Nanopillars, Th. Kehagias, J. Kioseoglou, T. Koukoula, A.O. Ajagunna, A. Georgakilas, Ph. Komninou, EDS-2012
  168. Role of Screw Threading Dislocations as Conductive One-Dimensional Nanostructures in AlN, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, Ph. Komninou, Th. Karakostas, EDS-2012
  169. Structural Anisotropic Properties of Nonpolar A-plane GaN on R-plane Sapphire, A. Lotsari, M. Katsikini, Th. Kehagias, J. Arvanitidis, S. Ves, G. Tsiakatouras, K. Tsagaraki, A. Georgakilas, Ph. Komninou, G. P. Dimitrakopulos, EDS-2012
  170. Si and C nanostructures fabricated by picosecond high repetition rate pulsed laser deposition, M. Pervolaraki, Ph. Komninou, J. Kioseoglou, A. Othonos, G.I. Athanasopoulos, J. Giapintzakis, EDS-2012
  171. Semipolar 11-22 AlN surfaces: Morphology and electronic properties, E. Kalesaki, J. Kioseoglou, L. Lymperakis, J. Neugebauer, Th. Karakostas, Ph. Komninou, EDS-2012
  172. Dissociation of the 60° basal dislocation in wurtzite GaN, I. Belabbas, J. Chen, Ph. Komninou, G. Nouet, EDS-2012
  173. Electronic properties of polar and semipolar AlN/GaN heterostructures, E. Kalesaki, J. Kioseoglou, Ph. Komninou, Th. Karakostas, EDS-2012
  174. Misfit relaxation in non-polar (1-100) AlN/GaN interfaces, J. Kioseoglou, G.P. Dimitrakopulos, M. Zacharopoulos, Ph. Komninou, Th. Karakostas, EDS-2012
  175. Interfacial structure of GaN nanowires on treated Al2O3 substrates J. Kioseoglou, T. Koukoula, Th. Kehagias, F. Furtmayr, M. Eickhoff, H. Kirmse, W. Neumann, Th. Karakostas, Ph. Komninou, EDS-2012
  176. Influence of Defect Characteristics on the Nanoindentation Response of A-plane GaN thin films, P. Kavouras, A. Lotsari, A. Georgakilas, Ph. Komninou, G. P. Dimitrakopoulos, EDS-2012
  177. Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates, Ph. Komninou, P. Gladkov, T. Karakostas, J. Pangrác, E. Hulicius, EDS-2012
  178. Defect Structure and Misfit Accommodation in Semipolar S-plane (1-101) InN Grown on R-plane Sapphire, G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Ph. Komninou, EDS-2012
  179. Electronic properties and bonding characteristics of AlN:Ag Thin Film Nanocomposites, Ch. E. Lekka, P.Patsalas, Ph. Komninou, G.A.Evangelakis, EDS-2012
  180. Diffusion through AlN/GaN interfaces, J. Kioseoglou, V. Pontikis, Ph. Komninou, Th. Karakostas, EDS-2012
  181. Structure and Electronic Properties of InGaN/GaN Nanowires using EELS, M-M Soumelidou, J. Kioseoglou, H. Kirmse, Th. Karakostas, Ph. Komninou, EDS-2012
  182. The effect of Ag nanoparticle incorporation to the structural changes of laser annealed AlN films A. Siozios, D.C. Koutsogeorgis, E. Lidorikis, G.P. Dimitrakopulos, Th. Kehagias, H. Zoubos, Ph. Komninou, W.M. Cranton, C. Kosmidis, P. Patsalas, EDS-2012
  183. Picosecond high-repetition-rate pulsed laser deposition of elemental nanostructures of Silicon and Carbon, M. Pervolaraki, Ph. Komninou, J. Kioseoglou, A. Othonos, G.I. Athanasopoulos, J. Giapintzakis, NN2012
  184. Pulsed UV Laser Annealing for nanoengineering AlN:Ag thin films with enhanced Surface Plasmon Resonance, D.C. Koutsogeorgis, A. Siozios, E. Lidorikis, G.P.Dimitrakopulos, Th. Kehagias, H. Zoubos, Ph. Komninou, W.M. Cranton, C. Kosmidis, P. Patsalas, NN2012
  185. Local Surface Plasmon Resonance engineering of AlN:Ag thin films by Pulsed UV Laser Annealing, A. Siozios, D.C. Koutsogeorgis, E. Lidorikis, G.P. Dimitrakopulos, Th. Kehagias3, H. Zoubos, Ph. Komninou, W.M. Cranton, C. Kosmidis, P. Patsalas, EMRS-2012 Spring meeting
  186. Ultra fast pulsed laser deposition of Carbon nanofoam: Structural and Optical characterization, M. Pervolaraki, A. Othonos, Ph. Komninou, Th. Kehagias, J. Giapintzakis, EMRS-2012 Spring meeting
  187. Si nanofoam grown by picosecond high repetition rate pulsed laser deposition, M. Pervolaraki, Ph. Komninou, Th. Kehagias, G.I. Athanasopoulos, J. Giapintzakis, EMRS-2012 Spring meeting
  188. Electron energy loss near edge structure (ELNES) of InxAl1-xN alloys, Ph. Komninou, J. Kioseoglou, H. Kirmse, Th. Karakostas, M.-M. Soumelidou, EMC2012
  189. Structural analysis of catalyst-free growth of GaN nanowires on Al2O3 substrates, Ph. Komninou, Th. Kehagias, J. Kioseoglou, F. Furtmayr, M. Eickhoff, Th. Karakostas, T. Koukoula, EMC2012
  190. TEM analysis of asymmetric V-shaped depressions in semipolar InGaN, A. Lotsari, A. Das, Th. Kehagias, Y. Kotsar, E. Monroy, Th. Karakostas, P. Gladkov, Ph. Komninou, G. P. Dimitrakopulos, EMC2012
  191. Polytypism in InN nanopillars grown on Si(111), Th. Kehagias, J. Kioseoglou, T. Koukoula, A.O. Ajagunna, A. Georgakilas, Ph. Komninou, EMC2012
  192. TEM/STEM characterization of polar and semipolar InGaN quantum dots, A. Lotsari, T. Koukoula, Th. Kehagias, G. P. Dimitrakopulos, I. Häusler, A. Das, E. Monroy, Th. Karakostas, Ph. Komninou, EMC2012
  193. Study of structural anisotropy in heteroepitaxial nonpolar GaN grown by MBE , A. Lotsari, Th. Kehagias, M. Katsikini, J. Arvanitidis, S. Ves, G. Tsiakatouras, K. Tsagaraki, A. Georgakilas, Ph. Komninou, G. P. Dimitrakopulos, Micro-Nano2012
  194. Semipolar III-Nitride surfaces: Structural and Electronic Properties J. Kioseoglou, E. Kalesaki, L. Lymperakis, J. Neugebauer, Ph. Komninou, Th. Karakostas, Micro-Nano2012
  195. Si and C nanostructures grown by high repetition rate pulsed laser deposition, M. Pervolaraki, Ph. Komninou, J. Kioseoglou, I. D. Feraru, C. E. A. Grigorescu, A. Othonos, G.I. Athanasopoulos, J. Giapintzakis, Micro-Nano2012
  196. Structural polytypes in InN nanopillars, J. Kioseoglou, T. Koukoula, Th. Kehagias, A.O. Ajagunna, A. Georgakilas, Ph. Komninou, Micro-Nano2012
  197. Nanoscale mechanical properties of a-plane nonpolar GaN thin films in correlation to their defect content, P. Kavouras, A. Lotsari, Th. Kehagias, A. Georgakilas, Ph. Komninou, G. P. Dimitrakopoulos, Micro-Nano2012
  198. Electron energy loss spectroscopy (EELS) study of InGaN and InAlN alloys, M.M. Soumelidou, J. Kioseoglou, H. Kirmse, Th. Karakostas, Ph. Komninou, Micro-Nano2012
  199. Structural and Electronic Properties of elastically strained InN/GaN Quantum Well Heterostructures, J. Kioseoglou, Ph. Komninou, J. Chen, G. Nouet and Th. Karakostas, EMRS 2013 Spring Meeting
  200. Structural and electronic properties of GaN nanowires with InxGa1-xN nanodisks, J. Kioseoglou, Ph. Komninou, C. D. Latham, M. I. Heggie, P.R. Briddon, M.J. Rayson, T. Pavloudis, M Zacharopoulos,and Th. Karakostas, EMRS 2013 Spring Meeting
  201. Spontaneous growth of III-V semiconductor nanopillars by molecular beam epitaxy for nanoelectronic, photonic and sensor applications, A. Georgakilas, A. Adikimenakis, S. Eftychis, J. Kruse, K. Tsagaraki, M. Androulidaki, E. Iliopoulos, Z. Hatzopoulos, P. Tzanetakis, Ph. Komninou, T. Koukoula, Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, A. Lotsari, Th. Karakostas, G. Konstantinidis, G. Doundoulakis, K. Zekentes, P. Dimitrakis, V. Ioannou-Sougleridis, A. Olziersky, P. Normand, IC4N 2013
  202. Embedded InxGa1-xN nanodisks in GaN nanowires, T. Pavloudis, J. Kioseoglou, Ph. Komninou, C. D. Latham, M. I. Heggie, P.R. Briddon, M.J. Rayson, M Zacharopoulos,Th. Karakostas, XIV IIB 2013
  203. Silver Nanoinclusions in Diamond-Like Carbon Coatings for Solar Thermal Energy Applications, M. Pervolaraki, L. Koutsokeras, G. I. Athanasopoulos, Ph. Komninou, J. Kioseoglou, G. Constantinides, F. Kossivas, A. Kyprianou, P. Patsalas, J. Giapintzakis, XIV IIB 2013
  204. Interfacial Properties of GaN Nanowires Grown on R-plane Sapphire, A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A. Adikimenakis, Ph. Komninou, A. Georgakilas, XIV IIB 2013
  205. Influence of Laser Annealing on the Structural Properties of AlN:Ag Plasmonic Nanocomposites, C. Bazioti, G.P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Siozios,D.C. Koutsogeorgis, P. Patsalas, XIV IIB 2013
  206. Study of the nucleation of GaN nanopillars on Si (111) substrates by plasma-assisted molecular beam epitaxy, S. Eftychis, J. Kruse, K. Tsagaraki, M. Androulidaki, A. Adikimenakis, T. Koukoula, Th. Kehagias, Ph. Komninou, A. Georgakilas, XIV IIB 2013
  207. Misfit Accommodation in InGaAs Compliant Heteroepitaxy on Porous GaAs Substrates, G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, Ph. Komninou, XIV IIB 2013
  208. Effect of low-temperature nucleation layer on the accommodation of InN on Si (111), Th. Kehagias, G. P. Dimitrakopulos, A. O. Ajagunna, E. Iliopoulos, Ph. Komninou, A. Georgakilas, XIV IIB 2013
  209. The role of Indium on the termination of IDBs in InN/GaN interfaces, T. Koukoula, Th. Kehagias, J. Kioseoglou, A. Georgakilas, Th. Karakostas, Ph. Komninou, XIV IIB 2013
  210. Polytypes in InN, T. Koukoula, J. Kioseoglou, Ph. Komninou, A. Georgakilas, Th. Kehagias, XIV IIB 2013
  211. The Effect of the Lower and Upper Interface on Properties of InAs/GaAs Quantum Dots, A. Hospodková, M. Zíková, J. Pangrác, Ph. Komninou, J. Kioseoglou, N. Florini, J. Oswald, I. Drbohlav, XIV IIB 2013
  212. The Role of Metallic Vacancies at AlN/GaN Interfaces on the Aging of Devices, J. Kioseoglou, V. Pontikis, Ph. Komninou, K. Iordanidou, Th. Karakostas, XIV IIB 2013
  213. Defect Structures at Nonpolar (1-100) AlN/GaN interfaces: a combined ab initio and interatomic potential calculations study, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, K. Iordanidou, Th. Karakostas, XIV IIB 2013
  214. Structure of inclined GaN nanowires grown on r-plane sapphire by PAMBE, G. P. Dimitrakopulos, Th. Kehagias, A. Lotsari, A. Adikimenakis, A. Georgakilas, and Ph. Komninou, ICDS 2013
  215. Structural analysis of layer-by-layer direct InN growth on Si, Th. Kehagias, G. P. Dimitrakopulos, T. Koukoula, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas, Ph. Komninou, ICDS 2013
  216. Selective growth of GaN nanowires on Si-treated Al2O3, J. Kioseoglou, Th. Kehagias, T. Koukoula, F. Furtmayr, H. Kirmse, M. Eickhoff, Th. Karakostas, and Ph. Komninou, ICDS 2013
  217. Microindentation-induced deformation in (0001) and (1010) GaN single crystals - A comparative study, P. Kavouras, I. Ratschinski, G.P. Dimitrakopulos, H.S. Leipner, Ph. Komninou, G. Leibiger, F. Habel, ICDS 2013
  218. Strained InGaAs thin films grown on porous GaAs compliant substrates, G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová and Ph. Komninou, ICDS 2013
  219. Study of nonpolar (1-100) AlN/GaN interfaces using ab initio and empirical potential calculations, J. Kioseoglou, G.P. Dimitrakopulos, Ph. Komninou, K. Iordanidou and Th. Karakostas, ICDS 2013
  220. Polytypes in InN Nanocolumns: Experimental Identification and Theoretical Analysis, J. Kioseoglou, T. Koukoula, Ph. Komninou, A. Georgakilas and Th. Kehagias, ICNS 2013
  221. Structural Properties of Inclined GaN Nanowires Grown Directly on r-plane Sapphire by MBE, G. P.Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Adikimenakis, A. Georgakilas and Ph. Komninou, ICNS 2013
  222. Structural and Electronic Properties of Embedded InxGal-xN Nanodisks in GaN Nanowires, J. Kioseoglou, Ph. Kornninou, Ch. D. Latham, M. Heggie, P. R. Briddon, M. J. Rayson, Th. Pavloudis and Th. Karakostas, ICNS 2013
  223. Relaxation Mechanisms in Nonpolar (1-100) AlN/GaN Interfaces, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Kornninou, K. Iordanidou and Th. Karakostas, ICNS 2013
  224. Misfit Dislocation Reduction in InGaAs Epilayers Grown on Porous GaAs Substrates, G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, and Ph. Komninou, EMRS 2013 Fall Meeting
  225. Study of nonpolar (1-100) AlN/GaN interfaces using ab initio and empirical potential calculations, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, K. Iordanidou, and Th. Karakostas, EMRS 2013 Fall Meeting
  226. High structural quality InN layers directly grown on Si(111) by MBE, G. P. Dimitrakopulos, T. Koukoula, A.O. Ajagunna, Ph. Komninou, A. Georgakilas, and Th. Kehagias, EMRS 2013 Fall Meeting
  227. Atomic Scale Characterization of III-V Semiconductor Nanostructures - INVITED LECTURE, Ph. Komninou, NANOCON 2013
  228. Structural and Electronic Properties of the Semipolar 10-13 Surfaces in GaN, J. Kioseoglou, E. Kalesaki, L. Lymperakis, Ph. Komninou, Th. Karakostas NANOCON 2013
  229. Structural and Photoluminescent Properties of Low Temperature InAs Buffer Layer Grown by MOVPE on GaAs Substrates, E. Hulicius, Ph. Komninou, P. Gladkov, Th. Karakostas, J. Pangrac NANOCON 2013
  230. Nanoporous Substrates as a Source of Compliance in Epitaxial Growth of III-V Semiconductors, J. Grym, P. Gladkov, J. Vanis , G. Dimitrakopulos, C. Bazioti , Ph. Komninou, E. Hulicius, J. Pangrac, O. Pacherova NANOCON 2013
  231. Understanding the role of interfacial layers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy, S. Eftychis, J. Kruse, K. Tsagaraki, M. Androulidaki, T. Koukoula, Th. Kehagias, Ph. Komninou, A. Georgakilas, EXMATEC, Delphi2014
  232. In- and N-face polarity InN (0001) heterostructures on Si (111) substrates A. Adikimenakis, A. O. Ajagunna, Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, A. Bairamis, E. Tsikritsaki, Ph. Komninou, A. Georgakilas, EXMATEC, Delphi2014
  233. InGaAs thin films grown on porous GaAs substrates: Microstructure and Strain accommodation, G. P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrac, O. Pacherova, Th. Karakostas, Ph. Komninou, EXMATEC, Delphi2014
  234. A phase shift method for IDB character determination in HRTEM images, T. Koukoula, J. Kioseoglou, Th. Kehagias, A. Georgakilas, Ph. Komninou, EXMATEC, Delphi2014
  235. Metallic Vacancies at GaN/AlN heterostructures, J. Kioseoglou, V. Pontikis, Ph. Komninou, Th. Karakostas, EXMATEC, Delphi2014
  236. Effect of crystallography on the extent of deformation in GaN single crystals, P. Kavouras, G. P. Dimitrakopulos, I. Ratschinski, H. S. Leipner, G. Leibiger, F. Habel, Ph. Komninou, EXMATEC, Delphi2014
  237. Structural analysis of inclined GaN nanowires grown on r-plane sapphire A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. Adikimenakis, Th. Karakostas, Ph. Komninou, A. Georgakilas, EXMATEC, Delphi2014
  238. Spontaneous growth of GaN nanowires on bare and AlN treated Si (111), T. Koukoula, Th. Kehagias, J. Kioseoglou, S. Eftychis, J. Kruse, A. Georgakilas, Ph. Komninou, EXMATEC, Delphi2014
  239. Superior quality GaN NWs grown on AlN treated Si (111) substrates, T. Kehagias, T. Koukoula, J. Kioseoglou, S. Eftychis, J. Kruse, A. Georgakilas, P. Komninou, IWN, 24-29 August 2014, Wroclaw, Poland
  240. GaN/AlN Core/ Shell Nanowires: Structural and Electronic Properties, T. Pavloudis, J. Kioseoglou, T. Koukoula, T. Kehagias, S. Eftychis, J. Kruse, A. Georgakilas, P. R. Briddon, M. J. Rayson, T. Karakostas, and P. Komninou,IWN, 24-29 August 2014, Wroclaw, Poland
  241. Termination Mechanism of Inversion Domains at the GaN/InN (0001) Interface T. Koukoula, J. Kioseoglou, T. Kehagias, A. Georgakilas, P. Komninou, IWN, 24-29 August 2014, Wroclaw, Poland
  242. Relative Energies of Metallic Vacancies at the Interfacial Area of GaN/AlN Heterostructures , J. Kioseoglou, V. Pontikis, Ph. Komninou, J. Chen, and Th. Karakostas, IWN, 24-29 August 2014, Wroclaw, Poland
  243. Selection of polarity of InN films on Si (111) substrates, A. Adikimenakis, Th. Kehagias, G. P. Dimitrakopulos, A. O. Ajagunna, J. Kioseoglou, A. Bairamis, E. Tsikritsaki, Ph. Komninou and A. Georgakilas, IWN, 24-29 August 2014, Wroclaw, Poland
  244. Structural characterization of self-assembled GaN nanowires grown on r-plane sapphire, A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A. Adikimenakis, Ph. Komninou, A. Georgakilas, IWN, 24-29 August 2014, Wroclaw, Poland
  245. Structural properties of GaN/AlN/GaN core-double shell nanowires, T. Koukoula, T. Kehagias, J. Kioseoglou, S. Eftychis, J. Kruse, A. Georgakilas, T. Karakostas, P. Komninou, IMC 2014
  246. Precise IDB-type identification by phase shift in HRTEM imaging, T. Koukoula, J. Kioseoglou, Th. Kehagias, A. Georgakilas, Ph. Komninou, IMC2014
  247. Surface dependent structure of GaN nanowires spontaneously grown on Si, T. Koukoula, T. Kehagias, J. Kioseoglou, S. Eftychis, J. Kruse, A. Georgakilas, P. Komninou, IMC2014
  248. Structural characterization of inclined GaN nanowires grown on r-plane sapphire, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. Adikimenakis, Ph. Komninou and A. Georgakilas, IMC 2014
  249. Structural Analysis and Modelling of GaN/AlN Core/Shell Nanowires, T. Pavloudis, J. Kioseoglou, T. Koukoula, Th. Kehagias, S. Eftychis, J. Kruse, A. Georgakilas, Th. Karakostas, Ph. Komninou, EDS 2014
  250. Surface Pre-treatment of (111) Si Substrates for GaN Nanowires Growth, T. Koukoula, Th. Kehagias, J. Kioseoglou, S. Eftychis, J. Kruse, A. Georgakilas, Th. Karakostas, Ph. Komninou, EDS 2014
  251. Structural analysis of inclined GaN nanowires by TEM techniques, A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A. Adikimenakis, Ph. Komninou and A. Georgakilas, EDS 2014
  252. Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires, Th. Kehagias, N. Florini, J. Kioseoglou, Th. Pavloudis, Ph. Komninou, T. Walther, K. Moratis, Z. Hatzopoulos, N. T. Pelekanos, MSM-XIX 2015
  253. Strain accommodation and indium incorporation in InxGa1-xN epilayers grown by molecular beam epitaxy, C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, Ph. Komninou, E. Iliopoulos, and G.P. Dimitrakopulos, MSM-XIX 2015
  254. Microscopical characterization of 2D-film selenide heterostructures deposited on polar wurtzite AlN by molecular beam epitaxy, C. Bazioti, G. P. Dimitrakopulos,Ph. Komninou, P. Tsipas, E. Xenogiannopoulou, S. Kassavetis, D. Tsoutsou, E. Golias, H. Liang, M. Caymax, A. Dimoulas, MSM-XIX 2015
  255. Heterostructured nanostructures in compound semiconductors, Ph. Komninou, MSM-XIX 2015
  256. Strained heterostructures in III-Nitride nanowires Th. Pavloudis, T. Koukoula, J. Kioseoglou, Th. Karakostas, Th. Kehagias, Cd. Latham, Pr. Briddon, Mj. Rayson, M. Eickhoff , Ph. Komninou, MSM-XIX 2015
  257. Structural properties of GaAs/AlGaAs core-shell nanowires for photovoltaic applications, Th. Kehagias, N. Florini, J. Kioseoglou, Th. Pavloudis, Ph. Komninou, T. Walther, K. Moratis, Z. Hatzopoulos, N. T. Pelekanos, E-MRS 2015
  258. Ab-initio electronic structure calculations and properties of [SixSn1-x]3N4 ternary nitrides grown by halide chemical vapor deposition, Th. Pavloudis, M. Zervos, Ph. Komninou, A. Othonos and J. Kioseoglou E-MRS 2015
  259. GaN/AlN and InN/GaN core/shell nanowires: strain and electronic properties, Th. Pavloudis, Ph. Komninou, P.R. Briddon, Th. Karakostas and J. Kioseoglou, E-MRS 2015
  260. The influence of strain on the energetics and electronic properties of InxGa1-xN /GaN superlattices in GaN nanowires, Th. Pavloudis, J. Kioseoglou, Th. Kehagias, Ph. Komninou, C. D. Latham, M. I. Heggie, P.R. Briddon, M.J. Rayson, M. Eickhoff and Th. Karakostas, E-MRS 2015
  261. Structural properties of 2D selenide heterostructures grown on (0001) AlN by molecular beam epitaxy, C. Bazioti, G. P. Dimitrakopulos, Ph. Komninou,K. Aretouli, P. Tsipas, D. Tsoutsou, E. Xenogiannopoulou, A. Dimoulas E-MRS 2015
  262. Production of Composite Materials by Mixing Chromium-Rich Ash and Soda-Lime Glass Powder: Mechanical Properties and Microstructure, S. Varitis, P. Kavouras, G. Vourlias, E. Pavlidou, Th. Karakostas, Ph. Komninou, ICWM 2015
  263. Vitrification and Devitrification of Chromium Containing Tannery Ash, Varitis, P. Kavouras, G. Kaimakamis, E. Pavlidou, G. Vourlias, K. Chrysafis, Ph. Komninou, Th. Karakostas, ICWM 2015
  264. Modes of direct introduction and indium distribution in InGaN epilayers grown by Molecular Beam Epitaxy,G. P. Dimitrakopulos, C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, Ph. Komninou, Th. Karakostas, and E. Iliopoulos, ICNS-11
  265. Interfacial Structure of Self-Assembled GaN NWs Grown on Si (111) and R-Plane Sapphire Substrates, Ph. Komninou, T. Koukoula, T. Kehagias, A. Lotsari, G.P. Dimitrakopulos, J. Kioseoglou, Th. Karakostas, S. Eftychis, A. Adikimenakis, J. Kruse, A. Georgakilas, ICNS-11
  266. Strain-Composition Relationship of InxGa1-XN Nano-Disks and Nano-Dots Embedded in GaN Nanowires, T. Koukoula, Th. Pavloudis, J. Kioseoglou, Th. Kehagias, G. P. Dimitrakopulos, M. Eickhoff, Ph. Komninou and Th. Karakostas, ICNS-11
  267. Fundamental Differences between Traditional III-V Compounds and Nitride Semiconductors, Philomela Komninou, Theodore D. Moustakas, ICNS-11
  268. Effectivity of SiO2-Mask Patterns for Selective-Area Growth of GaN Nanowires on Si (111) Substrates, E. Kruse, S. Eftychis, L. Lymperakis, A. Adikimenakis, G. Doundoulakis, K. Tsagaraki, M. Androulidaki , E. Iliopoulos, P. Tzanetakis, A. Olziersky, P. Dimitrakis, V. Ioannou-Sougleridis, P. Normand, T. Koukoula, Th. Kehagias, Ph. Komninou and A. Georgakilas, ICNS-11
  269. Comparison of Intentional and Unintentional Si (111) Nitridation Effects on the Interface and Properties of Spontaneously Grown GaN Nanowires, S. Eftychis, J. Kruse, K. Tsagaraki, M. Androulidaki, T. Koukoula,Th. Kehagias, Ph. Komninou and A. Georgakilas, ICNS-11
  270. SiO2-Mask Patterns for Selective Area Growth of GaN Nanowires on Si(111) Substrates, Jann E. Kruse, Savvas Eftychis, Adam Adikimenakis, George Doundoulakis, Katerina Tsagaraki, Maria Androulidaki, Antonis Olziersky, Panagiotis Dimitrakis, Vassilios Ioannou-Sougleridis, Pascal Normand, Triantafyllia Koukoula, Thomas Kehagias, Philomela Komninou, Alexandros Georgakilas E-MRS 2015 Fall meeting
  271. Layered epitaxial selenides grown on (0001) AlN: hetero-interfaces and defects, C. Bazioti, G. P. Dimitrakopulos, P. Tsipas, E. Xenogiannopoulou, A. Dimoulas, Ph. Komninou, ΙΙΒ 2016
  272. Strain distribution in ultra-thin In(Ga)N/GaN quantum wells, G.P. Dimitrakopulos, C. Bazioti, Th. Pavloudis, J. Kioseoglou, S. Kret, J. Koziorowska, T.Suski, E. Dimakis, T. Moustakas, Th. Karakostas, Ph. Komninou, ΙΙΒ 2016
  273. Chemically-driven misfit relaxation in high-alloy content InGaN epilayers, Ph. Komninou, C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Iliopoulos, G.P. Dimitrakopulos, ΙΙΒ 2016