Publications 2016-2000

Friday 27 March 2015 // F. Publications

2016

  1. Kinetic trapping through coalescence and the formation of patterned Ag-Cu nanoparticles, P. Grammatikopoulos, J. Kioseoglou, A. Galea, J. Vernieres, M. Benelmekki, R. E. Diaz, M. Sowwan, Nanoscale 8, 9780 (2016)
  2. Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties, E. Papadomanolaki, C. Bazioti, S.A. Kazazis, M. Androulidaki, G.P. Dimitrakopulos, E. Iliopoulos, Journal of Crystal Growth 437, 20 (2016)
  3. Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures, J. Smalc-Koziorowska, C. Bazioti, M. Albrecht, G. P. Dimitrakopulos, Appl. Phys. Lett. 108, 051901 (2016)
  4. Laser-driven structural modifications and diffusion phenomena of plasmonic AlN/Ag stratified films, E. Delli, C. Bazioti, N. Pliatsikas, N. Kalfagiannis, G. Vourlias, A. Siozios, G.P. Dimitrakopulos, D.C. Koutsogeorgis, P. Patsalas, Surface & Coatings Technology 295, 46 (2016)
  5. Study of fully epitaxial Fe/Pt bilayers for spin pumping by ferromagnetic resonance spectroscopy, A. Conca, S. Keller, L. Mihalceanu, T. Kehagias, G. P. Dimitrakopulos, B. Hillebrands, E. Th. Papaioannou, Phys. Rev. B 93, 134405 (2016)
  6. Structure, strain, and composition profiling of InAs/GaAs(211)B quantum dot superlattices, N. Florini, G. P. Dimitrakopulos, J. Kioseoglou, S. Germanis, C. Katsidis, Z. Hatzopoulos, N. T. Pelekanos, Th. Kehagias, J. Appl. Phys. 119, 034304 (2016)
  7. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy, J. E. Kruse, L. Lymperakis, S. Eftychis, A. Adikimenakis, G. Doundoulakis, K. Tsagaraki, M. Androulidaki, A. Olziersky, P. Dimitrakis, V. Ioannou-Sougleridis, P. Normand, T. Koukoula, Th. Kehagias, Ph. Komninou, G. Konstantinidis, A. Georgakilas, J. Appl. Phys. 119, 224305 (2016)
  8. Ordered structures in III-Nitride ternary alloys, Th. Pavloudis, J. Kioseoglou, Th. Karakostas, Ph. Komninou, Computational Materials Science 118, 22 (2016)
  9. Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires, S. Eftychis, J. Kruse, T. Koukoula, Th. Kehagias, Ph. Komninou, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, P. Tzanetakis, E. Iliopoulos, A. Georgakilas, Journal of Crystal Growth 442, 8 (2016)
  10. The influence of structural characteristics on the electronic and thermal properties of GaN/AlN core/shell nanowires, Th. Pavloudis, K. Termentzidis, Ph. Komninou, C. D. Latham, P. R. Briddon, J. Kioseoglou, J. Appl. Phys. 119, 074304 (2016)
  11. Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces,T. Koukoula, J. Kioseoglou, Th. Kehagias, F. Furtmayr, M .Eickhoff, H. Kirmse, Th. Karakostas, Ph. Komninou, Materials Science in Semiconductor Processing, doi: 10.1016/j.mssp.2016.03.015 (2016)
  12. The metalorganic vapour phase epitaxy growth of AIIIBV heterostructures observed by reflection anisotropy spectroscopy, M. Zíková, A. Hospodková, J. Pangrác, J. Vyskocil, E. Hulicius, J. Oswald, P. Komninou, J. Kioseoglou,Acta Physica Polonica A 129, A75 (2016)

2015

  1. Sub-surface laser nanostructuring in stratified metal/dielectric media: A versatile platform towards flexible, durable and large-scale plasmonic writing, A. Siozios, N. Kalfagiannis, D. V. Bellas, C. Bazioti, G. P. Dimitrakopulos, G. Vourlias, W. M. Cranton, E. Lidorikis, D. C. Koutsogeorgis, P. Patsalas, Nanotechnology 26, 155301 (2015)
  2. Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy, C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, Ph. Komninou, Th. Karakostas, E. Iliopoulos, G. P. Dimitrakopulos, J. Appl. Phys. 118, 155301 (2015)
  3. Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires, Th. Kehagias, N. Florini, J. Kioseoglou, Th. Pavloudis, Ph. Komninou, T. Walther, K. Moratis, Z. Hatzopoulos, N. T. Pelekanos, Semicond. Sci. Technol. 30, 114012 (2015)
  4. Laser-matter interactions, phase changes and diffusion phenomena during laser annealing of plasmonic AlN:Ag templates and their applications in optical encoding, A. Siozios, D. C. Koutsogeorgis, E. Lidorikis, G. P. Dimitrakopulos, N. Pliatsikas, G. Vourlias, T. Kehagias, P. Komninou, W. Cranton, C. Kosmidis, P. Patsalas, J. Phys. D: Appl. Phys. 48, 285306 (2015)
  5. Ab-initio electronic structure calculations and properties of (SixSn1-x)3N4 ternary nitrides, Th. Pavloudis, M. Zervos, Ph. Komninou, J. Kioseoglou, Thin Solid Films, doi:10.1016/j.tsf.2015.09.072 (2015)
  6. Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire, A. Adikimenakis, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, K. E. Aretouli, K. Tsagaraki, M. Androulidaki, Ph. Komninou, A. Georgakilas, J. Appl. Phys. 117, 244302 (2015)
  7. A study of the piezoelectric properties of semipolar 1122 GaN/AlN quantum dots, T.D. Young, G. Jurczak, A. Lotsari, G.P. Dimitrakopulos, P. Komninou, P. Dlłuzewski, Phys. Status Solidi B 252, No. 10 (2015)
  8. Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks,J. Kioseoglou, Th. Pavloudis, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. D. Latham, M. J. Rayson, P. R. Briddon, and M. Eickhoff, J. Appl. Phys. 118, 034301 (2015)
  9. High quality large area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy,Evangelia Xenogiannopoulou, Polychronis Tsipas, Kleopatra E. Aretouli, Dimitra Tsoutsou, Sigiava A. Giamini, Calliope Bazioti, George Dimitrakopulos, Philomela Komninou, Steven Brems, Cedric Hughebaert, Iuliana P. Radu and Athanasios Dimoulas, Nanoscale 7, 7896 (2015)
  10. Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces, J. Kioseoglou, V. Pontikis, Ph. Komninou, Th. Pavloudis, J. Chen and Th. Karakostas, J. Phys.: Condens. Matter 27, 125006 (2015)
  11. Incineration of tannery sludge under oxic and anoxic conditions: Study of chromium speciation, P. Kavouras, E. Pantazopoulou, S. Varitis, G. Vourlias, K. Chrissafis, G.P. Dimitrakopulos, M. Mitrakas, A.I. Zouboulis, Th. Karakostas, A. Xenidis, Journal of Hazardous Materials 283, 672 (2015)
  12. Devitrification routes of a vitrified chromium-loaded ash, S. Varitis, E. Pavlidou, P. Kavouras, G. Vourlias, K. Chrissafis, A. Xenidis, Th. Karakostas, J. Therm. Anal. Calorim. 121, 203 (2015)
  13. Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy, Alice Hospodková, Jiří Pangrác, Jan Vyskočil, Markéta Zíková, Jiří Oswald, Philomela Komninou, Eduard Hulicius, J. Crystal Growth 414, 156 (2015)
  14. MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm, Markéta Zíková, Alice Hospodková, Jiří Pangrác, Jiří Oswald, Pavel Krčil, Eduard Hulicius, Philomela Komninou, Joseph Kioseoglou, J. Crystal Growth 414, 167 (2015)
  15. Angular-dependent Raman study of a- and s-plane InN, K. Filintoglou, M. Katsikini, J. Arvanitidis, D. Christofilos, A. Lotsari, G. P. Dimitrakopulos, N. Vouroutzis, A. O. Ajagunna, A. Georgakilas, N. Zoumakis, G. A. Kourouklis, and S. Ves, J. Appl. Phys. 117, 075302 (2015)
  16. Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures, C. Bazioti, E. Papadomanolaki, Th. Kehagias, M. Androulidaki, G. P. Dimitrakopulos, and E. Iliopoulos, Phys. Status Solidi B, 1–8 (2015)
  17. Novel Synthesis of Ultra-Small Dextran Coated Maghemite Nanoparticles for MRI and CT Contrast Agents via a Low Temperature Co-Precipitation Reaction, PIoannis Rabias, Michael Fardis, Thomas Kehagias, Dimitris Kletsas, Harris Pratsinis, Danai Tsitrouli, Maris, G.Thomas, George Papavassiliou, Journal of Nanoscience and Nanotechnology 15, 205 (2015)

2014

  1. Observation of Surface Dirac Cone in High-Quality Ultrathin Epitaxial Bi2Se3 Topological Insulator on AlN(0001) Dielectric, Polychronis Tsipas, Evangelia Xenogiannopoulou, Spyridon Kassavetis, Dimitra Tsoutsou, Evangelos Golias, Calliope Bazioti, George P. Dimitrakopulos, Philomela Komninou, Hu Liang, Matty Caymax, and Athanasios Dimoulas, ACS Nano 8 (7), 6614 (2014)
  2. Selective Area Growth of Well-Ordered ZnO Nanowire Arrays with Controllable Polarity, Vincent Consonni , Eirini Sarigiannidou, Estelle Appert , Amandine Bocheux , Sophie Guillemin , Fabrice Donatini , Ivan-Christophe Robin , Joseph Kioseoglou , and Florence Robaut, ACS Nano 8 (5), 4761 (2014)
  3. Raman and photoluminescence mapping of InxGa1-xN (x ∼0.4) at high pressure: Optical determination of composition and stress, V. Gkrana, K. Filintoglou, J. Arvanitidis, D. Christofilos, C. Bazioti, G. P. Dimitrakopulos, M. Katsikini, S. Ves, G. A. Kourouklis, N. Zoumakis, A. Georgakilas, and E. Iliopoulos, Appl. Phys. Lett. 105, 092107 (2014)
  4. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering, Cathal Cassidy, Joseph Kioseoglou, Vidyadhar Singh, Panagiotis Grammatikopoulos, Chhagan Lal, and Mukhles Sowwan, Appl. Phys. Lett. 104, 161903 (2014)
  5. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy, A. Lotsari, Th. Kehagias, G. Tsiakatouras, K. Tsagaraki, M. Katsikini, J. Arvanitidis, D. Christofilos, S. Ves, Ph. Komninou, A. Georgakilas, and G. P. Dimitrakopulos, J. Appl. Phys. 115, 213506 (2014)
  6. Broad compositional tunability of indium tin oxide nanowires grown by the vapour- liquid-solid mechanism, M. Zervos, C.N. Mihailescu, J. Giapintzakis, C.R. Luculescu, N. Florini, Ph. Komninou, J. Kioseoglou, and A. Othonos, APL Materials 2, 056104 (2014)
  7. Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates, Ph. Komninou, P. Gladkov, Th. Karakostas, J. Pangrác, O. Pacherová, J. Vaniš, E. Hulicius, J. Crystal Growth 396, 54 (2014)
  8. Self-annihilation of inversion domains by high energy defects in III-Nitrides, T. Koukoula, J. Kioseoglou, T. Kehagias, A.O. Ajagunna, P. Komninou, A. Georgakilas, Appl. Phys. Lett. 104, 141914 (2014)
  9. Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots, Alice Hospodková, Jiří Pangrác, Markéta Zíková, Jiří Oswald, Jan Vyskočil, Philomela Komninou, Joseph Kioseoglou, Nikoleta Florini, Eduard Hulicius, Appl. Surf. Sci. 301, 173 (2014)
  10. Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates, G.P. Dimitrakopulos, C. Bazioti, J. Grym, P. Gladkov, E. Hulicius, J. Pangrác, O. Pacherová, Ph. Komninou, Appl. Surf. Sci. 306, 89 (2014)
  11. Thermal oxidation and facet-formation mechanisms of Si nanowires, J. Kioseoglou, Ph. Komninou and M. Zervos, Phys. Status Solidi RRL 8, 307 (2014)
  12. Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures, J. Kioseoglou, Ph. Komninou, J. Chen, G. Nouet, E. Kalesaki, and Th. Karakostas, Phys. Status Solidi C 11, No. 2, 289 (2014)
  13. Influence of laser annealing on the structural properties of sputtered AlN:Ag plasmonic nanocomposites, C. Bazioti, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Siozios, E. Lidorikis, D. C. Koutsogeorgis, P. Patsalas, J. Mate. Sci. 49, 3996 (2014)
  14. Transport properties of metal–semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles,R. Yatskiv, J. Grym, V.V. Brus, O. Cernohorsky, P.D. Maryanchuk, C. Bazioti, G.P. Dimitrakopulos and Ph. Komninou, Semicond. Sci. Technol. 29, 045017 (2014)

2013

  1. Detection of hydrogen at room temperature with graphite-Pt nanoparticles/Si Schottky diodes, R. Yatskiv, J. Grym, O. Cemohorsky, C. Bazioti, G.P. Dimitrakopulos, P. Komninou, Proceedings of the International Semiconductor Conference, CAS 1, 23 (2013)
  2. Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier, A. Hospodková, J. Oswald, J. Pangrác, M. Zíková, J. Kubištová, Ph. Komninou, J. Kioseoglou, K. Kuldová and E. Hulicius, J. Appl. Phys. 114, 174305 (2013)
  3. Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates, Th. Kehagias, G. P. Dimitrakopulos, A. O. Ajagunna, T. Koukoula, K. Tsagaraki, A. Adikimenakis, Ph. Komninou, and A. Georgakilas, J. Appl. Phys. 114, 163519 (2013)
  4. Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires, Th. Kehagias, G. P. Dimitrakopulos, P. Becker, J. Kioseoglou, F. Furtmayr, T. Koukoula, I. Häusler, A. Chernikov, S. Chatterjee, Th. Karakostas, H.-M. Solowan, U. T. Schwarz, M. Eickhoff and Ph. Komninou, Nanotechnology 24, 435702 (2013)
  5. Nanostructural and electronic properties of polytypes in InN nanocolumns, J. Kioseoglou, T. Koukoula, Ph. Komninou, A. Georgakilas, M. Androulidaki and Th. Kehagias, J. Appl. Phys. 114, 074312 (2013)
  6. InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface, J. Teubert, S. Koslowski, S. Lippert, M. Schäfer, J. Wallys, G. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Das, E. Monroy and M. Eickhoff, J. Appl. Phys. 114, 074313 (2013)
  7. The 60 basal dislocation in wurtzite GaN: Energetics, electronic and core structures, I. Belabbas, J. Chen, Ph. Komninou, G. Nouet, Computational Materials Science 79, 118 (2013)
  8. Electron energy loss near edge structure of InxAl 1-xN alloys, M.M. Soumelidou, J. Kioseoglou, H. Kirmse, Th. Karakostas, Ph. Komninou, Microelectronic Engineering 112, 198 (2013)
  9. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition, M. Pervolaraki, Ph. Komninou, J. Kioseoglou, G.I. Athanasopoulos, J. Giapintzakis, Applied Surface Science 278, 67 (2013)
  10. Ultrafast pulsed laser deposition of carbon nanostructures: Structural and optical characterization, M. Pervolaraki, Ph. Komninou, J. Kioseoglou, A. Othonos, J. Giapintzakis, Applied Surface Science 278, 101 (2013)
  11. Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc, G. Jacopin, L. Rigutti, J. Teubert, F. H. Julien, F. Furtmayr, Ph. Komninou, Th. Kehagias, M. Eickhoff and M. Tchernycheva, Nanotechnology 24, 125201 (2013)
  12. Atomic scale morphology, growth behaviour and electronic properties of semipolar 1 0-13 GaN surfaces, J. Kioseoglou, E. Kalesaki, L. Lymperakis, Th. Karakostas and Ph. Komninou, J. Phys.: Condens. Matter 25, 045008 (2013)
  13. Atomic scale modeling of edge a-type dislocations in InN, J. Kioseoglou, Phys. Status Solidi A 210, 204 (2013)
  14. Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire, G. P. Dimitrakopulos, A. Lotsari, Th. Kehagias, A. Ajagunna, A. Georgakilas, Th. Karakostas, and Ph. Komninou, Phys. Status Solidi A 210, 199 (2013)
  15. Influence of defect characteristics on the nanoindentation response of a-plane GaN thin films, P. Kavouras, A. Lotsari, Th. Kehagias, A. Georgakilas, Ph. Komninou, and G. P. Dimitrakopoulos, Phys. Status Solidi A 210, 213 (2013)
  16. Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution, M. Zervos, A. Othonos, D. Tsokkou, J. Kioseoglou, E. Pavlidou, and P. Komninou, Phys. Status Solidi A 210, 226 (2013)
  17. Dissociation of the 60° basal dislocation in wurtzite GaN, I. Belabbas, J. Chen, Ph. Komninou, and G. Nouet, Phys. Status Solidi C 10, 84 (2013)
  18. Structural and electronic properties of InGaN/GaN nanowires by the use of EELS, M.-M. Soumelidou, J. Kioseoglou, H. Kirmse, P. Komninou, T. Karakostas, Phys. Status Solidi C 10, 105 (2013)

2012

  1. Anisotropic strain in α-plane GaN and polarization dependence of the Raman peaks, M. Katsikini, J. Arvanitidis, D. Christofilos, S.Ves, G. P. Dimitrakopulos, G. Tsiakatouras, K. Tsagaraki, and A. Georgakilas, Phys. Status Solidi A 209, 1085 (2012)
  2. Epitaxial relationship of semipolar s-plane (1-101) InN grown on r-plane sapphire, G. P. Dimitrakopulos, Appl. Phys. Lett. 101, 011904 (2012)
  3. Effects of intrasubband coupling on the scattering phases and density of states in a quantum wire, Vassilios Vargiamidis, Vassilios Fessatidis, Ph. Komninou, Physics Letters A 376, 3337 (2012)
  4. Reconstructions and electronic structure of (11-22) and (11-2-2) semipolar AlN surfaces, E. Kalesaki, L. Lymperakis, J. Kioseoglou, J. Neugebauer, Th. Karakostas, and Ph. Komninou, J. Appl. Phys. 112 , 033510 (2012)
  5. Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, Ph. Komninou, and Th. Karakostas, Phys. Stat. Sol. (c), 9, 484 (2012)
  6. Structural characterization of InN epilayers grown on r-plane sapphire by plasma-assisted MBE , A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas, and Ph. Komninou, Phys. Stat. Sol. (c), 9, 534 (2012)
  7. Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects , J. Kioseoglou, A. Lotsari, E. Kalesaki and G. P. Dimitrakopulos , J. Appl. Phys., 111, 033507 (2012)
  8. Optical Encoding by Plasmon-Based Patterning: Hard and Inorganic Materials Become Photosensitive, A. Siozios, D. C. Koutsogeorgis, E. Lidorikis, G. P. Dimitrakopulos, Th. Kehagias, H. Zoubos, Ph. Komninou, W. M. Cranton, C. Kosmidis and P. Patsalas, Nanoletters, 12, 259 (2012)
  9. Structure and Strain State of Polar and Semipolar InGaN Quantum Dots, T. Koukoula, A. Lotsari, Th. Kehagias, G. P. Dimitrakopulos, I. Hausler, A. Das, E. Monroy, Th. Karakostas and Ph. Komninou, Appl. Surf. Sci. 260 , 7 (2012)
  10. Atomistic modeling and HRTEM simulations of misfit dislocations in InN/GaN interfaces, J. Kioseoglou, E. Kalesaki, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou and Th. Karakostas, Appl. Surf. Sci. 260 , 23 (2012)
  11. Morphology and origin of V-defects in semipolar (11–22) InGaN, A. Lotsari, A. Das, Th. Kehagias, Y. Kotsar, E. Monroy, Th. Karakostas, P. Gladkov, Ph. Komninou and G. P. Dimitrakopulos, J. Cryst. Gr. 339, 1 (2012)
  12. Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma assisted MBE, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, A. Das, E. Monroy and Ph. Komninou, Microelectronic Enginnering 90, 108 (2012)

2011

  1. Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material, J. Kioseoglou, E. Kalesaki, I. Belabbas, J. Chen, G. Nouet, H. Kirmse, W. Neumann, Ph. Komninou and Th. Karakostas, J. Appl. Phys. 110, 053715 (2011)
  2. Interfacial sources of extended defects in nonpolar and semipolar III-Nitride semiconductors, G. P. Dimitrakopulos, J. Phys. Conf. Ser. 281, 012012 (2011)
  3. Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots, A. Das, G. P. Dimitrakopulos, Y. Kotsar, A. Lotsari, Th. Kehagias, Ph. Komninou and E. Monroy, Appl. Phys. Lett. 98, 201911 (2011)
  4. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy, Z. Gacevic, A. Das, J. Teubert, Y. Kotsar, P. K. Kandaswamy, Th. Kehagias, T. Koukoula, Ph. Komninou and E. Monroy, J. Appl. Phys. 109, 103501 (2011)
  5. Electronic structure of 1/6 <20-23> partial dislocations in wurtzite GaN, J. Kioseoglou, E. Kalesaki, L. Lymperakis, J. Neugebauer, Ph. Komninou and Th. Karakostas, J. Appl. Phys. 109, 083511 (2011)
  6. Electronic properties and bonding characteristics of AlN:Ag Thin Film Nanocomposites, Ch. E. Lekka, P. Patsalas, Ph. Komninou and G. A. Evangelakis, J. Appl. Phys. 109, 054310 (2011)
  7. Comparison of Fe and Si doping of GaN: An EXAFS and Raman study, M. Katsikini, F. Pinakidou, J. Arvanitidis, E. C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos and T. D. Moustakas, Mat. Sci. Eng. B 176, 723 (2011)
  8. Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates, I. Tsiaoussis, V. Khranovskyy, G. P. Dimitrakopulos, J. Stoemenos, R. Yakimova, B. Pecz, J. Appl. Phys. 109, 043507 (2011)
  9. Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers, V. Ioannou-Sougleridis, N. Kelaidis, D. Skarlatos, C. Tsamis, S. N.Georga, C.A. Krontiras, Ph. Komninou, Th. Speliotis, P. Dimitrakis, B. Kellerman, M. Seacrist, Thin Solid Films 519, 5456 (2011)
  10. Properties of GaN nanowires grown by molecular beam epitaxy, C. Chèze, B. Jenichen, O. Brandt, C. Pfüller, St. Münch, R. Rothemund, St. Reitzenstein, A. Forchel, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas, L. Lari, P. Chalker,M. Gass, H. Riechert and L. Geelhaar, IEEE J. Sel. Top. Quant. Electr. 17, 878 (2011)
  11. Effect of edge threading dislocations on the electronic structure of InN, E. Kalesaki, J. Kioseoglou, L. Lymperakis, Ph. Komninou and Th. Karakostas, Appl. Phys. Lett. 98, 072103 (2011)
  12. Indium adsorption and incorporation mechanisms in AlN, E. Kalesaki, J. Kioseoglou, Ph. Komninou and Th. Karakostas, J. Mat. Sci. 46, 4377 (2011)
  13. Growth and characterization of polar (0001) and semipolar (11-22) InGaN/GaN quantum dots, A. Das, P. Sinha, Y. Kotsar, P. K. Kandaswamy, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, G. Nataf, P. De Mierry, E. Monroy, J. Cryst. Gr. 323, 161 (2011)

2010

  1. Morphology and strain of self-assembled semipolar GaN quantum dots in (11-22) AlN, G. P. Dimitrakopulos, E. Kalesaki, J. Kioseoglou, Th. Kehagias, A. Lotsari, L. Lahourcade, E. Monroy, I. Hausler, H. Kirmse, W. Neumann, G. Jurczak, T. D. Young, P. Dluzewski, Ph. Komninou and Th. Karakostas, J. App. Phys. 108, 104304 (2010)
  2. Electron microscopy of InGaN nanopillars spontaneously grown on Si (111) substrates, Th. Kehagias, I. Kerasiotis, A. P. Vajpeyi, I. Hausler, W. Neumann, A. Georgakilas, G. P. Dimitrakopulos and Ph. Komnninou, Phys. Stat. Sol. (c) 7, 1305 (2010)
  3. Bare-Eye View at the Nanoscale: a New Visual Interferometric Multi-Indicator (VIMI), E. Lidorikis, P. Patsalas, N. Panagiotopoulos, C. Prouskas, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas and A. Tighe, ACS Applied Materials and Interfaces 2, 3052 (2010)
  4. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: structural and optical properties, G.E. Dialynas, S. Kalliakos, C. Xenogianni, M. Androulidaki, T. Kehagias, P. Komninou, P.G. Savvidis, Z. Hatzopoulos and N.T. Pelekanos, J. Appl. Phys. 108, 103525 (2010)
  5. Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer, G. P. Dimitrakopulos, Th. Kehagias, A. Ajagunna, J. Kioseoglou, I. Kerasiotis, G. Nouet, A. P. Vajpeyi, Ph. Komninou and Th. Karakostas, Phys. Stat. Sol. (a) 207, 1074 (2010)
  6. Direct comparison of catalyst-free and catalyst-induced GaN nanowires, C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos and Th. Karakostas, Nano Research 3, 528 (2010)
  7. On the deposition mechanisms and the formation of glassy Cu-Zr thin films, G. A. Almyras, G. M. Matenoglou, Ph. Komninou, C. Kosmidis, P. Patsalas and G. A. Evangelakis, J. Appl. Phys. 107, 084313 (2010)
  8. Crystallization process of thermally treated vitrified EAFD waste, I. Tsilika, I. Eleftheriadis, Th. Kehagias, E. Pavlidou, Th. Karakostas and Ph. Komninou, J. Eur. Cer. Soc. 30, 2009 (2010)
  9. Structure, stability and mechanical performance of AlN:Ag nanocomposite films, A. Lotsari, G. P. Dimitrakopulos, Th. Kehagias, P. Kavouras, H. Zoubos, L.E. Koutsokeras, P. Patsalas and Ph. Komninou, Surf. Coat. Technol. 204, 1937 (2010)
  10. Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE, Th. Kehagias, L. Lahourcade, A. Lotsari, E. Monroy, G. P. Dimitrakopulos and Ph. Komninou, Phys. Stat. Sol. (b) 247, 1637 (2010)
  11. Nanoscale indium variation along InGaN nanopillars grown on (111) Si substrates, Th. Kehagias, Physica E 42, 2197 (2010)
  12. Rapid magnetic heating treatment by highly charged maghemite nanoparticles on Wistar rats exocranial glioma tumours at micro litre volume, I. Rabias, D. Tsitrouli, E. Karakosta, Th. Kehagias, G. Diamantopoulos, M. Fardis, D. Stamopoulos, T. G. Maris, P. Falaras, N. Zouridakis, N. Diamantis, G. Panayotou, D. A. Verganelakis, G. I. Drossopoulou, E. C. Tsilibari and G. Papavassiliou, Biomicrofluidics 4, 024111 (2010)
  13. Continuum and atomistic modelling of the mixed straight dislocation, P. Dluzewski, T. D. Young, G. P. Dimitrakopulos and Ph. Komninou, Int. J. Mult. Comp. Eng. 8, 331 (2010)
  14. The defect character of GaN growth on r-plane sapphire, J. Smalc-Koziorowska, G. Tsiakatouras, A. Lotsari, A. Georgakilas, and G. P. Dimitrakopulos, J. Appl. Phys. 107, 073525 (2010)

2009

  1. Stranski-Krastanow growth of (11-22)-oriented GaN/AlN quantum dots, L. Lahourcade, S. Valdueza-Felip, T. Kehagias, G. P. Dimitrakopulos, Ph. Komninou and E. Monroy, Appl. Phys. Let. 94, 111901 (2009)
  2. Energetics of oxygen adsorption and incorporation at InN polar surface: A first-principles study, A. Belabbes, J. Kioseoglou, Ph. Komninou and Th. Karakostas, Phys. Stat. Sol. (c) 6, S364 (2009)
  3. Core models of a-edge threading dislocations in wurtzite III ( Al, Ga, In)-Nitrides, J. Kioseoglou, Ph. Komninou and Th. Karakostas, Phys. Stat. Sol. (a) 206, 1931 (2009)
  4. Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers, V. Ioannou-Sougleridis , N. Kelaidis, C. Tsamis, D. Skarlatos, C. A. Krontiras, and S. N. Georga, Ph. Komninou, B. Kellerman and M. Seacrist, J. Appl. Phys. 105, 114503 (2009)
  5. Magnesium adsorption and incorporation in InN (0 0 0 1) and (000-1) surfaces: A first- principles study, A. Belabbes, J. Kioseoglou, Ph. Komninou, G.A. Evangelakis, M. Ferhat and Th. Karakostas, Appl. Surf. Sci. 255, 8475 (2009)
  6. Strain accommodation and interfacial structure of AlN interlayers in GaN, G. P. Dimitrakopulos, E. Kalesaki, Ph. Komninou, Th. Kehagias, J. Kioseoglou and Th. Karakostas, Cryst. Res. Technol. 44, 1170 (2009)
  7. Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy, Th. Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. Georgakilas, W. Neumann, Th. Karakostas and Ph. Komninou, Appl. Phys. Lett. 95, 071905 (2009)
  8. Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy, S. -L. Sahonta, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, A. Adikimenakis, E. Iliopoulos, A. Georgakilas, H. Kirmse, W. Neumann and Ph. Komninou, Appl. Phys. Lett. 95, 021913 (2009)
  9. Polar AlN/GaN interfaces: Structures and energetics, J. Kioseoglou, E. Kalesaki, L. Lymperakis, G. P. Dimitrakopulos, Ph. Komninou, and Th. Karakostas, Phys. Stat. Sol. (a) 206, 1892 (2009)
  10. Effect of annealing on the structural role of Fe in composite Fe- and Zn-rich materials: a XAFS study, F. Pinakidou, M. Katsikini, G. Kaimakamis, Th. Kehagias and E.C. Paloura, J. Alloys and Compounds 483, 665 (2009)
  11. ZnO nanostructures grown on epitaxial GaN, M. Breedon, Th. Kehagias, M. Shafiei, K. Kalantar-zadeh and W. Wlodarski, Thin Solid Films 518, 1053 (2009)
  12. Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE, A. Adikimenakis, S.-L. Sahonta, G.P. Dimitrakopulos, J. Domagala, Th. Kehagias, Ph. Komninou, E. Iliopoulos and A. Georgakilas, J. Cryst. Gr. 311, 2010 (2009)
  13. Metal-containing amorphous Carbon (a-C:Ag) and AlN (AlN:Ag) metallo-dielectric nanocomposites, G. M. Matenoglou, H. Zoubos, A. Lotsari, Ch. E. Lekka, Ph. Komninou, C. Kosmidis, G.A. Evangelakis and P. Patsalas, Thin Solid Films 518, 1508 (2009)
  14. Silver nanoparticles and graphitic carbon through thermal decomposition of a silver/acetylenedicarboxylic salt, P. Dallas, A. B. Bourlinos, Ph. Komninou, M. Karakassides and D. Niarchos, Nan. Res. Let. 4, 1358 (2009)
  15. Nonsingular dislocation and crack fields: Implications to small volumes, J. Kioseoglou, I. Konstantopoulos, G. Ribarik. G. P. Dimitrakopulos and E. C. Aifantis, Microsyst. Technol. 15, 117 (2009)

2008

  1. Controlled Growth of Porous Networks in Phosphide Semiconductor, A. Delimitis, Ph. Komninou, Th. Kehagias, E. Pavlidou, Th. Karakostas, P. Gladkov and D. Nohavica, J. Por. Mat. 15, 75 (2008)
  2. Crystallization of Amorphous Silicon Thin Films: Comparison Between Experimental and Computer Simulation Results, J. Kioseoglou, Ph. Komninou, G. P. Dimitrakopulos, I. P. Antoniades, M.K. Hatalis and Th. Karakostas, J. Mat. Sci. 43, 3976 (2008)
  3. Study of InN/GaN interfaces using molecular dynamics, J. Kioseoglou, E. Kalessaki, G. P. Dimitrakopulos, Ph. Komninou and Th. Karakostas, J. Mat. Sci. 43, 3982 (2008)
  4. Interface Controlled Active Fracture Modes in Glass-Ceramics P. Kavouras, Th. Kehagias, Ph. Komninou, K. Chrissafis, C. Charitidis and Th. Karakostas, J. Mat. Sci. 43, 3954 (2008)
  5. Dislocation core investigation by Geometric Phase Analysis and the Dislocation Density Tensor, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas and E. C. Aifantis, J. Physics D: Applied Physics 41, 1 (2008)
  6. Interatomic potential calculations of III(Al,In)-N planar defects with a III-species environment approach, J. Kioseoglou, Ph. Komninou and Th. Karakostas, Phys. Stat. Sol. (b) 245, 1118 (2008)
  7. Micropore modification in InP, D. Nohavica, P. Gladkov, Z. Jarchovský, J. Zelinka, Ph. Komninou, A. Delimitis, Th. Kehagias and Th. Karakostas, Phys. Stat. Sol. (a) 205, 2577 (2008)
  8. Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias, S.-L. Sahonta, J. Kioseoglou, N. Vouroutzis, I. Hausler, W. Neumann, E. Iliopoulos, A. Georgakilas and Th. Karakostas, Phys. Stat. Sol. (a) 205, 2569 (2008)
  9. Electron microscopy investigation of extended defects in a-plane gallium nitride layers deposited on r-plane sapphire, J.Smalc-Koziorowska, Ph. Komninou, S. -L. Sahonta, J. Kioseoglou, G. Tsiakatouras and A.Georgakilas, Phys. Stat. Sol. (c) 5, 3748 (2008)
  10. Defect characterization and analysis of III-V nanowires grown by Ni- promoted MBE, L. Lari, R. T. Murray, M. Gass, T. J. Bullough, P. R. Chalker, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. Chèze, L. Geelhaar and H. Riechert, Phys. Stat. Sol. (a) 205, 2589 (2008)
  11. Fano effect in quasi-one-dimensional wires with short- or finite-range impurities, V. Vargiamidis, Ph. Komninou and H. M. Polatoglou, Phys. Stat. Sol. (c) 5, 3813 (2008)
  12. Step-induced misorientation of GaN grown on r-plane sapphire, J. Smalc-Koziorowska, G. P. Dimitrakopulos, S. -L. Sahonta, G. Tsiakatouras, A. Georgakilas, and Ph. Komninou, Appl. Phys. Lett. 93, 021910 (2008)
  13. Atomic-scale configuration of catalyst particles on GaN nanowires, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, C. Chèze, L. Geelhaar, H. Riechert and Th. Karakostas, Phys. Stat. Sol. (c) 5, 3716 (2008)
  14. Temperature dependent EXAFS of InN, M. Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, A. Georgakilas and E. Welter, Phys. Stat. Sol. (a) 205, 2611 (2008)
  15. Effect of composition on the bonding environment of In in InAlN and InGaN epilayers, M. Katsikini, F. Pinakidou, E. C. Paloura, Ph. Komninou, E. Iliopoulos, A. Adikimenakis, A. Georgakilas and E. Welter, Phys. Stat. Sol. (a) 205, 2593 (2008)
  16. Structural properties of ultrathin InGaN/GaN quantum wells, S. -L. Sahonta , Ph. Komninou, G. P. Dimitrakopulos , C. Salcianu, E. J. Thrush and Th.Karakostas, Phys. Stat. Sol. (a) 205, 2556 (2008)
  17. Structural role and coordination environment of Fe in Fe2O3-PbO-SiO2-Na2O composite glasses, F. Pinakidou, M. Katsikini, P. Kavouras, F. Komninou, Th. Karakostas and E.C. Paloura, J. Non Cryst. Solids 354, 105 (2008)
  18. Microstructure of defects in InGaN/GaN quantum well heterostructures, S. -L. Sahonta, Ph. Komninou, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, Th. Karakostas, C. Salcianu and E. J. Thrush, J. Phys.: Conf. Ser. 126, 012048 (2008)
  19. Effects of stress-relieving AlN interlayers in GaN-on-Si grown by plasma-assisted molecular beam epitaxy, A. Adikimenakis, S. –L. Sahonta, G. P. Dimitrakopulos, J. Domagala, Ph. Komninou and A. Georgakilas, MRS Symposium Proceedings 1068, 153 (2008)

2007

  1. Effects of ion implantation on the mechanical behavior of GaN films, P. Kavouras, Ph. Komninou and Th. Karakostas, Thin Solid Films 515, 3011 (2007)
  2. Structural characterization of Na2O-SiO2-CaO glass ceramics reinforced with Electric Arc Furnace Dust, I. Tsilika and Ph. Komninou, J. Eur. Ceram. Soc. 27, 2423(2007)
  3. Atomic core configurations of the a-screw basal dislocation in wurtzite GaN, I. Belabbas, G. Nouet and Ph. Komninou, J. Cryst. Gr. 300, 212 (2007)
  4. On the distribution and bonding environment of Zn and Fe in glasses containing Electric Arc Furnace Dust: a μ-XAFS and μ-XRF study, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Th. Kehagias, Ph. Komninou, Th. Karakostas and A. Erko, J. Haz. Mat. 142, 297 (2007)
  5. Strain distribution of thin InN epilayers grown on (0001) GaN templates by molecular beam epitaxy, A. Delimitis, Ph. Komninou, G. P. Dimitrakopulos, Th. Kehagias, J. Kioseoglou, Th. Karakostas and G. Nouet, Appl. Phys. Lett. 90, 061920 (2007)
  6. 3D modelling of misfit networks in the interface region of heterostructures, T. D Young, J. Kioseoglou, G. P. Dimitrakopulos, P. Dłuzewski and Ph. Komninou, J. Phys. D: Applied Physics 40, 4084 (2007)
  7. Axial and radial growth of Ni-induced GaN nanowires, L. Geelhaar, C. Chèze, W. M. Weber, R. Averbeck, and H. Riechert, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos and Th. Karakostas, Appl. Phys. Lett. 91, 093113 (2007)
  8. Glass-ceramic materials from electric arc furnace dust, P. Kavouras, Th. Kehagias, I. Tsilika, G. Kaimakamis, K. Chrissafis, D. Papadopoulos and Th. Karakostas, J. Haz. Mat. 139, 424 (2007)
  9. EAFD-loaded vitreous and glass-ceramic materials, P. Kavouras, Th. A. Ioannidis, Th. Kehagias, I. Tsilika, K. Chrissafis, S. Kokkou, A. Zouboulis and Th. Karakostas, J. Eur. Cer. Soc. 27, 2317 (2007)
  10. Growth modes of nanocrystalline Ni/Pt multilayers with deposition temperature, V. Karoutsos, P. Papasotiriou, P. Poulopoulos, V. Kapaklis, C. Politis, M. Angelakeris, Th. Kehagias, N.K. Flevaris and E. Th. Papaioannou, J. Appl. Phys. 102, 043525 (2007)
  11. Hybrid approach to the synthesis of FePt / Fe3B nanocomposite magnets, O. Crisan, M. Angelakeris, Th. Kehagias and G. Filoti, J. Opt. Adv. Mat. 9, 2734 (2007)
  12. Misfit reduction by a Spinel layer formed during the epitaxial growth of ZnO on Sapphire using a MgO buffer layer, A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos and A. Waag, J. Cryst. Gr. 308, 314 (2007)
  13. Size effect of crystalline inclusions on the fracture modes of glass-ceramic materials, C. Charitidis, T.E. Karakasides, P. Kavouras and Th. Karakostas, J.Phys. Cond. Mat. 19, 266209 (2007)

2006

  1. Determination of contaminant release from the PbO-Fe2O3-SiO2-Na2O vitrification system using industrial solid waste or artificial mixtures, Th. A. Ioannidis, G. Kaimakamis, P. Kavouras, C.P. Hadjiantoniou, M. Sofoniou, A. Zouboulis and Th. Karakostas, Water, Air and Soil Pollution 176, 201 (2006)
  2. Synthesis, characterization and thermal properties of polymer/magnetite nanocomposites, P. Dallas, V. Georgakilas, D. Niarchos, Ph. Komninou, Th. Kehagias and D. Petridis, Nanotechnology 17, 2046 (2006)
  3. Modification of the Fe-environment in Fe2O3 glass/glass ceramic systems containing Pb, Na and Si, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, O. Kalogirou, Ph. Komninou and Th. Karakostas, Nuclear Instruments and Methods in Physics Research B 246, 170 (2006)
  4. Application of μ-XAFS for the determination of the crystallization ratio in a series of vitro-ceramic materials containing industrial waste, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Ph. Komninou, Th. Karakostas and A. Erko, Nuclear Instruments and Methods in Physics Research B 246, 238 (2006)
  5. Crystal phase separation and microstructure of a thermally treated vitrified solid waste, Th. Kehagias, Ph. Komninou, P. Kavouras, K. Chrissafis, G. Nouet and Th. Karakostas, J. Eur. Cer. Soc. 26, 1141 (2006)
  6. Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy, J. Arvanitidis, M. Katsikini, S. Ves, A. Delimitis, Th. Kehagias, Ph. Komninou, E. Dimakis, E. Iliopoulos, A. Georgakilas, Phys. Stat. Sol. (b) 243, 1588 (2006)
  7. Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN (0001), A. Delimitis, P. Gladkov, Ph. Komninou, Th. Kehagias, J. Arvanitidis, S. Ves, M. Katsikini, E. Dimakis and A. Georgakilas, Phys. Stat. Sol. (a) 203, 162 (2006)
  8. Structural properties of quaternary InAlGaN MQWs grown by plasma-assisted MBE, G. P. Dimitrakopulos, J. Kioseoglou, E. Dimakis, A. Georgakilas, G. Nouet and Ph. Komninou, Phys. Stat. Sol. (a) 203, 2151 (2006)
  9. Mixed partial dislocation core structure in GaN by high resolution electron microscopy, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Kehagias and Th. Karakostas, Phys. Stat. Sol. (a) 203, 2156 (2006)
  10. Analysis of partial dislocations in wurtzite GaN using gradient elasticity, J. Kioseoglou, G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, and I. Konstantopoulos, M. Avlonitis and E.C. Aifantis, Phys. Stat. Sol. (a), 203, 2161 (2006)
  11. The role of alkali content in the devitrification mechanisms of SiO2-Fe2O3-Na2O-PbO system, P. Kavouras, Th. Kehagias, K. Chrissafis, Ph. Komninou and Th. Karakostas, J. Therm. Anal. Cal. 86, 715 (2006)
  12. On the coordination environment of Fe- and Pb-rich solidified industrial waste: an X-Ray absorption and Mössbauer study, F. Pinakidou, M. Katsikini, E. C. Paloura , P. Kavouras, O. Kalogirou, Ph. Komninou, Th. Karakostas and A. Erko, J. Non Crystalline solids 352, 2933 (2006)
  13. Oxidation of very low energy nitrogen–implanted strained-silicon, N. Kelaidis, D. Skarlatos, V. Ioannou-Sougleridis, C. Tsamis, Ph. Komninou, B. Kellerman and M. Seacrist, Mat. Sci. Eng. B 135, 199 (2006)
  14. Energetics of the 30° Shockley partial dislocation in wurtzite GaN, I. Belabbas, G. Dimitrakopulos, J. Kioseoglou, A. Béré, J.Chen, Ph. Komninou, P. Ruterana and G. Nouet, Superlat. Microstr. 40, 458 (2006)
  15. Structural properties of 10μm thick InN grown on sapphire (0001), E. Dimakis, J. Domagała, A. Delimitis, Ph. Komninou, A. Adikimenakis, E. Iliopoulos and A. Georgakilas, Superlat. Microstr. 40, 246 (2006)
  16. InN quantum dots grown on GaN (0001) by molecular beam epitaxy, E. Dimakis, A. Georgakilas, E. Iliopoulos, K. Tsagaraki, A. Delimitis, Ph. Komninou, H. Kirmse, W. Neumann, M. Androulidaki and N. T. Pelekanos, Phys. Stat. Sol. (c) 3, 3983 (2006)
  17. Depth profile of the biaxial strain in a 10 μm thick InN (0001) film, J. Arvanitidis, D. Christofilos, G.A. Kourouklis, A. Delimitis, M. Katsikini, Ph. Komninou, S. Ves, E. Dimakis and A. Georgakilas, J. Appl. Phys. 100, 113516 (2006)
  18. Structure effects on the magnetism of AgCo nanoparticles, O. Crisan, M. Angelakeris, K. Simeonidis, Th. Kehagias, Ph. Komninou, M. Giersig and N.K. Flevaris, Acta Materialia 54, 5251 (2006)
  19. High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy, J. S. Cabalu, A. Bhattacharyya, C. Thomidis, I. Friel, TD. Moustakas, C. J. Collins and Ph.Komninou, J. Appl. Phys. 100, 104506 (2006)
  20. On the parameters affecting the fracture modes in glass-ceramic materials, P. Kavouras, C. Charitidis and Th. Karakostas, Journal of Non-Crystalline Solids 352, 5515 (2006)
  21. Tailoring the mechanical properties of glass-ceramic materials from solid wastes, P. Kavouras, C. Charitidis, Th. Kehagias and Th. Karakostas, J. Env. Prot. Ecol. 4 (2006)
  22. Vitrification as a tool for solid waste treatment: A case study for electric arc furnace dust, P. Kavouras, G. Kaimakamis, I. Tsilika, Th. A. Ioannidis, Th. Kehagias, K. Chrissafis, E. Pavlidou, S. Kokkou, G.P. Dimitrakopulos, C. Charitidis, E. Fournou-Karga, I. Haritonidis, K. Paraskevopoulos, A. I. Zouboulis, Ph. Komninou and Th. Karakostas, J. Env. Prot. Ecol. 4 (2006)

2005

  1. Interfacial steps, dislocations and inversion domain boundaries in GaN/AlN/Si (0001) / (111) epitaxial system, G. P. Dimitrakopulos, A. M. Sanchez, Ph. Komninou, Th. Kehagias, Th. Karakostas, G. Nouet and P. Ruterana, Phys. Stat. Sol. (b) 242, 1617 (2005)
  2. Correlation between nucleation, morphology and residual strain of InN grown on GaN (0001), E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias and A. Georgakilas, J. Cryst. Gr. 278, 367 (2005)
  3. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy, E. Dimakis, E. Iliopoulos, K. Tsagaraki, Ph. Komninou, Th. Kehagias and A. Georgakilas, J. Appl. Phys. 97, 113520 (2005)
  4. Interfacial structure of MBE grown InN on GaN, Th. Kehagias, E. Iliopoulos, A. Delimitis, G. Nouet, E. Dimakis, A. Georgakilas, and Ph. Komninou, Phys. Stat. Sol. (a) 202, 777 (2005)
  5. Misfit Accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy, Th. Kehagias, A. Delimitis, Ph. Komninou, E. Iliopoulos, E. Dimakis, A. Georgakilas,G. Nouet, Appl. Phys. Lett. 86, 151905 (2005)
  6. Disconnections and Inversion Domain Formation in GaN/AlN Heteroepitaxy on (111) Silicon, G. P. Dimitrakopulos, A. M. Sanchez, Ph. Komninou, P. Ruterana, G. Nouet, Th. Kehagias, and Th. Karakostas, Phys. Stat. Sol. (c) 2, 2500 (2005)
  7. Atomic Simulations and HRTEM Observations of Σ = 18 Tilt Grain Boundary in GaN, J. Kioseoglou, A. Béré, Ph. Komninou, A. Serra, G. P. Dimitrakopulos, G. Nouet, and Th. Karakostas, Phys. Stat. Sol. (b) 202, 799 (2005)
  8. Study of annealing induced devitrification of stabilized industrial waste glasses by means of micro x-ray fluorescence mapping and absorption fine structure spectroscopy, F. Pinakidou, M. Katsikini, E. C. Paloura, P. Kavouras, Ph. Komninou, and Th. Karakostas and A. Erko, J. Non-Cryst. Solids 351, 2474 (2005)
  9. XAFS studies on vitrified industrial waste, F. Pinakidou, M. Katsikini, E.C. Paloura, P. Kavouras, Ph. Komninou, Th. Karakostas, A. Erko, Physica Scripta T115, 931 (2005)
  10. Partial dislocations in wurtzite GaN (invited paper), Ph. Komninou, J. Kioseoglou, G. P. Dimitrakopulos, Th. Kehagias, and Th. Karakostas Phys. Stat. Sol. (a) 202, 2888 (2005)
  11. Mechanism for Pinhole Formation in GaN / AlN / Si(111) MBE Layers from Steps at the Substrate Surface, A.M. Sanchez, G.P. Dimitrakopulos and P. Ruterana, Appl. Phys. Lett. 86, 011917 (2005)

2004

  1. Effect of composition and annealing temperature on the mechanical properties of a vitrified waste, P. Kavouras, Ph. Komninou and Th. Karakostas, J. Eur. Cer. Soc. 24, 2095 (2004)
  2. Atomic structures and energies of partial dislocations in wurtzite GaN, J. Kioseoglou, G.P. Dimitrakopulos, Ph. Komninou and Th. Karakostas, Phys. Rev. B 70, 035309 (2004)
  3. Junction lines of inversion domain boundaries with stacking faults in GaN, J. Kioseoglou, G.P. Dimitrakopulos, Ph. Komninou, H.M. Polatoglou, A. Serra, A. Béré, G. Nouet and Th. Karakostas, Phys. Rev. B 70, 115331 (2004)
  4. Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE, Ph. Komninou, Th. Kehagias, A. Delimitis, G.P. Dimitrakopulos, J. Kioseoglou, E. Dimakis, A. Georgakilas and Th. Karakostas, Superlat. and Microstr. 36, 509 (2004)
  5. Correlation of structure and magnetism of AgCo nanoparticles arrays, O. Crisan, M. Angelakeris, M. Norguès, Th. Kehagias and Ph. Komninou, N. Sobal, M. Giersig, and N. K. Flevaris, J. Mag. Magn. Mat. E1253, 272, (2004)
  6. Twin formation in sputter-grown ZnO/Al2O3(0001) epitaxial film: A real time x-ray scattering study, W. Kim, Y. B. Kwon, J. M. Yi, J. H. Je, G. Nouet, T. Wojtowicz, P. Ruterana, and J. Kioseoglou, J. Vac. Sci. Technol. A 22, 2159 (2004)

2003

  1. “Side Chain” Modification of MCM-41 Silica through the Exchange of the Surfactant Template with Charged Functionalized Organosiloxanes: An Efficient Route to Valuable Reconstructed MCM-41 Derivatives, B. Bourlinos, Th. Karakostas and D. Petridis, J. Phys. Chem. B 107, 920-925 (2003)
  2. Microstructure of planar defects and their interactions in wurtzite GaN films, J. Kioseoglou, Ph. Komninou, G.P. Dimitrakopulos, Th. Kehagias, H. M. Polatoglou, G. Nouet and Th Karakostas, Sol. Stat. Electr. 47, 553 (2003)
  3. A modified empirical potential for energetic calculations of planar defects in GaN, J. Kioseoglou, H. M. Polatoglou, L. Lymperakis, G. Nouet and Ph. Komninou, Comp. Mat. Sci. 27, 43 (2003)
  4. Vitrification of lead – rich solid ashes from incineration of hazardous industrial wastes, P. Kavouras, G. Kaimakamis, Th. A. Ioannidis, Th. Kehagias, Ph. Komninou, S. Kokkou, E. Pavlidou, I. Antonopoulos, M. Sofoniou, A. Zouboulis, C. P. Hadjiantoniou, A. Prakouras and Th. Karakostas, Waste Management 23, 361 (2003)
  5. Microstructural changes of processed vitrified solid waste products, P. Kavouras, Ph. Komninou, K. Chrissafis, G. Kaimakamis, S. Kokkou, K. Paraskevopoulos and Th. Karakostas, J. Eur. Cer. Soc. 23, 1305 (2003)
  6. Optical and electrical properties of TiN/n-GaN contacts in correlation with their structural properties, S. Gautier, Ph. Komninou, P. Patsalas, Th. Kehagias, S. Logothetidis, C. A. Dimitriadis and G. Nouet, Sem. Sci. Technol. 18, 594 (2003)
  7. Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN, J. Kioseoglou, A. Béré, G. P. Dimitrakopulos, A. Serra, G. Nouet and Ph. Komninou, Phys. Stat. Sol. (c) 0, 2464 (2003)
  8. Akaganeite and goethite-type nanocrystals: Synthesis and characterization, D. N. Bakoyannakis, E. A. Deliyanni, A.I . Zouboulis, K. A. Matis, L. Nalbantian and Th. Kehagias, Micr. Mesop. Mat. 59, 35 (2003)
  9. Mechanisms for the Formation of Inversion Domains in GaN, A. M. Sánchez, G. P. Dimitrakopoulos and P. Ruterana, Inst. Phys Conf. Ser. 180, 269 (2003)

2002

  1. Atomic scale models of interactions between inversion domain boundaries and intrinsic basal stacking faults in GaN, J. Kioseoglou, G. P. Dimitrakopulos, H. M. Polatoglou, L. Lymperakis, G. Nouet and Ph. Komninou, Diam. Rel. Mat. 11, 905 (2002)
  2. Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates, S. Mikroulis, A. Georgakilas, A. Kostopoulos, V. Cimalla, E. Dimakis and Ph. Komninou, Appl. Phys. Lett. 80, 2886 (2002)
  3. Dependence of exchange bias energy on spin projections at (La,Ca)MnO3 ferromagnetic/antiferromagnetic interfaces, C. Christides, N. Moutis, Ph. Komninou, Th. Kehagias and G. Nouet, J. Appl. Phys. 92, 397 (2002)
  4. Interfacial and defect structures in multilayered GaN/AlN films, Ph. Komninou, Th. Kehagias, J. Kioseoglou, G. P. Dimitrakopulos, A. Sampath, T. D. Moustakas, G. Nouet and Th. Karakostas, J. Phys. Cond. Matt. 14, 13277 (2002)
  5. Disconnections at translation domain boundaries in epitaxial GaN, G. P. Dimitrakopulos, Th. Kehagias, Ph. Komninou, G. Nouet and Th. Karakostas, J. Phys. Cond. Matt. 14, 12709 (2002)
  6. A parametric study of implantation induced variations on the mechanical properties of epitaxially grown GaN films, P. Kavouras, M. Katsikini, Th. Kehagias, E. C. Paloura, Ph. Komninou, J. Antonopoulos and Th. Karakostas, J. Phys. Cond. Matt. 14, 12953 (2002)
  7. The effect of photo-activated glazes on the microhardness of acrylic baseplate resins, J.K. Emmanouil, P. Kavouras and Th. Kehagias, J. Dent. 30, 7-10 (2002)

2001

  1. Misfit relaxation of the AlN/Al2O3 (0001) interface, Th. Kehagias, Ph. Komninou G. Nouet, P. Ruterana and Th. Karakostas, Phys. Rev. B 64, 195329 (2001)
  2. Effects of the sapphire nitridation on the polarity and structural properties of GaN layers grown by plasma-assisted MBE, A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, M. Androulidaki, Ph. Komninou, Th. Kehagias and Th. Karakostas, Phys. Stat. Sol. (a) 188, 567 (2001)
  3. Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy, E. Iliopoulos, K.F. Ludwig Jr., T. D. Moustakas, Ph. Komninou, T. Karakostas, G. Nouet and S.N.G. Chu, Mat. Sci. Eng. B 87, 227 (2001)
  4. Structural Transition of Inversion Domain Boundaries through Interactions with Intrinsic Basal stacking Faults in Epitaxial GaN, G. P. Dimitrakopulos, J. Kioseoglou, Th. Kehagias, E. Sarigiannidou, G. Nouet, A.Georgakilas, Th. Karakostas and Ph. Komninou, Phys. Rev. B 64, 245325 (2001)
  5. Structural properties of ZnSe epilayers on (111) GaAs, A. G. Kontos, N. Chrysanthakopoulos, M. Calamiotou, Th. Kehagias, Ph. Komninou and U. W. Pohl, J. Appl. Phys. 90, 3301 (2001)
  6. Ion implantation effects on the microhardness and microstructure of GaN, P. Kavouras, M. Katsikini, N. Vouroutzis, C.B. Lioutas, E.C. Paloura, J. Antonopoulos and Th. Karakostas, J. Cr. Growth 230, 454 (2001)
  7. Topological analysis of defects in epitaxial nitride films and interfaces, G. P. Dimitrakopulos, Ph. Komninou and R. C. Pond, Phys. Stat. Sol. (b) 227, 45 (2001)
  8. Microstructure of GaN films grown by RF-plasma assisted molecular beam epitaxy, Ph. Komninou, Th. Kehagias, J. Kioseoglou, E. Sarigiannidou, Th. Karakostas, G. Nouet, P. Ruterana, K. Amimer, S. Mikroulis and A. Georgakilas, MRS Symposium - Proceedings 639, G3.47.1 (2001)
  9. Interaction between basal stacking faults and prismatic inversion domain boundaries in GaN, Ph. Komninou, J. Kioseoglou, E. Sarigiannidou, G. P. Dimitrakopulos, Th. Kehagias, A. Georgakilas, G. Nouet, P. Ruterana and Th. Karakostas, MRS Symposium - Proceedings 639, G3.44.1 (2001)

2000

  1. The microstructure and electrical properties of directly deposited TiN omhic contact to Gallium Nitride, P. Ruterana, G. Nouet, Th. Kehagias, Ph. Komninou, Th. Karakostas, C. A. Dimitriadis, F. Huet and M.A. di Forte Poisson, MRS Internet Journal of Nitride Semiconductor Research 5S1, F99W11.75 (2000)
  2. Growth of fcc Co in sputter-deposited Co/Au multiplayers with (111) texture, Th. Kehagias, Ph. Komninou, C. Christides, G. Nouet, S. Stavroyiannis and Th. Karakostas, J. Cryst. Gr. 208, 401 (2000)
  3. Crystalline structures of carbon complexes in amorphous carbon films, Ph. Komninou, G. Nouet, P. Patsalas, Th. Kehagias, M. Gioti, S. Logothetidis and Th. Karakostas, Diamond and Related Materials 9, 703 (2000)
  4. Anisotropic microhardness and crack propagation in epitaxially grown GaN films, P. Kavouras, Ph. Komninou, M. Katsikini, V. Papaioannou, J. Antonopoulos and Th. Karakostas, J. Phys. Cond. Mat. 12, 10241 (2000)
  5. Interfacial dislocations in TiN/GaN thin films, Ph. Komninou, G. P. Dimitrakopulos, G. Nouet, Th. Kehagias, P. Ruterana and Th. Karakostas, J. Phys. Cond. Mat. 12, 10295 (2000)
  6. Improved growth and perpendicular anisotropy in Pd-Co multilayers with intentionally alloyed layers, P. Poulopoulos, M. Angelakeris, Th. Kehagias, D. Niarchos and N.K. Flevaris, Thin Solid Films 371, 225 (2000)
  7. Microstructure and electrical properties of directly deposited TiN ohmic contacts to gallium nitride, P. Ruterana, G. Nouet, Th. Kehagias, Ph. Komninou, Th. Karakostas, M.A. di Forte Poisson and F. Huet, MRS Symposium - Proceedings 595, W.11.75.1 (2000)